Vertical to surface transmission electrophotonic device with selectable output light channels

Kim

Applied Physics Letters

et al. 2005

This study demonstrates the lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36V and 10μA, respectively. The lasing threshold current is 131mA at 25°C. The output peak wavelength is 1570nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.

Section: Lasing Characteristics Of Ingaas/ Ingaasp Multiple-quantum-wmentioning

confidence: 99%

Lasing characteristics of InGaAs∕InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

Kim

Applied Physics Letters

et al. 2005

“…[3][4][5][6][7] The double-heterostructure optoelectronic switch (DHOS) has been demonstrated for the first time in the InP/InGaAsP material system by Swoger et al [8] This structure, however, uses an n-type charge sheet layer, which makes it difficult for the device to be fully depleted. In this study, the highly doped charge sheet layer is not used.…”

Section: Introductionmentioning

confidence: 98%

Vertical-injection depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure

et al. 2005

We present the first demonstration of the vertical-injection depleted optical thyristor-laser diode (VIDOT-LD) with InGaAs/InGaAsP multiple quantum well structure. The VIDOT-LD using the vertical-injection structure shows very good isolation between input and output signal. For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V and 100 A. The lasing threshold current is 131 mA at 25°C. The output peak wavelength is 1570 nm at a bias current of 1.22 I th and there is no input signal.

Semicond. Sci. Technol.

“…The first experimental studies concerned with thyristor heterostructures were carried out as far back as the 1970s [1]. However, only several decades later it became possible, owing to the development of epitaxial technologies, to obtain results demonstrating the potential of such structures as subnanosecond power electric switches [2] and laser emitters [3][4][5]. Further analysis of the approaches based on the epitaxial integration of a thyristor structure with a laser heterostructure yielded new solutions in the fields of nonlinear conversion and control over the spectral and mode composition of laser light [6], fabrication of elements serving as switches or logical components in information systems [5,[7][8][9], and generation of an ultrabroad laser emission spectrum [10].…”

Section: Introductionmentioning

confidence: 99%

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Podoskin

Soboleva

Zakharov

et al. 2015

An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p-n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.