Vertical<scp>GaN</scp>Power Devices

Chowdhury, Srabanti; Ji, Dong

doi:10.1002/9783527825264.ch5

Cited by 6 publications

(3 citation statements)

References 45 publications

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“…As a consequence of the presence of spontaneous and piezoelectric polarization charges, the large bandgap, and the high critical electric field, GaN enabled the design of HEMTs based on the AlGaN/GaN heterojunction, which are now becoming excellent candidates for RF amplifiers for 5G and beyond [39][40][41], and power devices with a operating voltage of 650 V and more [42]. In addition, vertical power transistors targeting 1200 V and above are under study [43][44][45].…”

Section: Wide-bandgap Semiconductors and Applicationsmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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The study of deep level defects in semiconductors has always played a strategic role for the development of electronic and optoelectronic devices. In fact, deep levels have a strong impact on many of the device properties, including the efficiency, stability, and reliability because they can drive several physical process. Despite the advancements in crystal growth, wide and ultrawide bandgap semiconductors (such as gallium nitride and gallium oxide) are still strongly affected by the formation of defects that in general can act as carrier traps or generation-recombination centers. Conventional techniques used for deep level analysis in silicon need to be adapted for identifying and characterizing defects in wide bandap materials. This topical review paper presents an overview of reviews the theory of deep levels in semiconductor; in addition, we present a review and original results and on the application, limits and perspectives of two widely adopted most common deep -levels detection techniques, namely capacitance deep level transient spectroscopy and deep level optical spectroscopy, with specific focus on wide bandgap semiconductors. Finally, the most common traps of GaN and β-Ga2O3 are reviewed.

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Section: Wide-bandgap Semiconductors and Applicationsmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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“…To better the breakdown voltage by removing the open base effect of N-P-N, the junction amidst the p-base and the n+ source region is connected to the source contact. Due to the inversion layer of the MOS structure, the channel is formed (located at the etched sidewall) [69].…”

Section: Classification Of Semiconductor Power Devicesmentioning

confidence: 99%

Wide Band Gap Devices and Their Application in Power Electronics

et al. 2022

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Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

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“…Despite the high density o threading dislocations (~10 8 -10 9 cm 2 ) [22], originating rom the lattice and thermal expansion coecient mismatch with the substrate, low-cost heteroepitaxial GaN on sapphire is widely employed in optoelectronics, whereas GaN grown on Si and on semi-insulating SiC are employed in medium-voltage (650-900 V) power transistors and RF transistors, respectively. On the other hand, low-dislocation-density (<10 5 cm 2 ) n-GaN homoepitaxial layers on n + bulk GaN [22] are necessary or the implementation o vertical transistors and diodes, allowing to ully exploit the potential o GaN at higher voltage/current rating [23]. Although ree-standing GaN still remain high-cost substrates, large improvement in the bulk growth methods have been made during last decade [24], and high quality bulk GaN waers up to 100 mm diameter are now available.…”

Section: Introductionmentioning

confidence: 99%