Vertical polyelectrolyte-gated organic field-effect transistors

Abstract

Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.Original Publication:Jiang Liu, Lars Herlogsson, A Sawadtee, P Favia, M Sandberg, Xavier Crispin, Isak Engquist and Magnus Berggren, Vertical polyelectrolyte-gated organic field-effect transistors, 2010, Applied Physics Letters, (97), , 103303.http://dx.doi.org/10.1063/1.3488000Copyright: American Institute of Physicshttp://www.aip.org

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