Vertical Junction Silicon Microdisk Modulators at 25Gb/s

Timurdogan, Erman; Sorace-Agaskar, Cheryl; Biberman, Aleksandr; Watts, Michael R.

doi:10.1364/ofc.2013.oth3h.2

Cited by 9 publications

(27 citation statements)

References 8 publications

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“…As discussed earlier, depletion p-n diode modulation has become increasingly attractive for Si ring modulators targeted at 10 Gb/s and beyond; significant progress has been made in the last 5 years [38]- [52]. The lateral p-n junction, as illustrated in Figs.…”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

“…Another form of depletion p-n diode modulation uses a vertical p-n junction in a microdisk structure [49]- [52]. The advantages of such a structure are two-fold.…”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

“…Fig. 10 shows a microdisk structure with 3 μm radius [52]. Its p-n interface area can be calculated as ∼27 μm 2 , which is about three times the 5-μm-radius ring in [43], and part of it is the p+ to n+ interface with 100 times of doping.…”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

“…Only half of the disk edge was doped as p-n junction in order to integrate the heater; and the interference from the heater operation required increasing modulation voltage in order to maintain the eye quality. In [52], 25 Gb/s modulation with ∼6 dB ER was demonstrated under 1.2 V pp applied through a 50-Ω terminated probe (which makes R dr = 25 Ω in (10)). …”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

See 3 more Smart Citations

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

148

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Silicon photonics is the most promising pathway to achieve >10 Tb/s off-chip I/O bandwidth required by nextgeneration high-performance computing and switching systems. Ring resonator modulators offer the advantages of small footprint, low power, high efficiency, low loss, high speed, and CMOS compatibility for silicon photonic links. This paper presents an indepth discussion of practical microring modulators in silicon, covering their performance metrics, design tradeoffs, optimization, p-n junction geometries, complex ring configurations, and tuning solutions. Various demonstrated Si ring modulators are reviewed and potential future developments are briefly discussed.

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Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

“…Another form of depletion p-n diode modulation uses a vertical p-n junction in a microdisk structure [49]- [52]. The advantages of such a structure are two-fold.…”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

See 2 more Smart Citations

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

148

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show abstract

“…Ge FK modulators, on the other hand, showed slightly a higher total power penalty of ∼10 dB [47] due to their relatively low extinction ratio. Although ring/disc modulators can potentially be improved with substantially lower total power penalty of <5 dB [50] employing a vertical junction design on a thinner SOI platform, we use a conservative 8 dB based on our measured device for future goal for consistency with other components.…”

Section: Link Budget For Silicon Photonic Intra-module and Intermentioning

confidence: 99%

Energy-Efficient Photonics in Future High-Connectivity Computing Systems

Krishnamoorthy

Schwetman

Zheng

et al. 2015

J. Lightwave Technol.

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Energy-efficiency has become a critical parameter in the design of high-performance computing systems. Typically, compute elements consume the most energy in current systems, withmemories and interconnect networks close behind. This paper proposes an energy-efficient, high-connectivity, petascale computing system for the year 2020 timeframe by addressing the energy requirements of these three components. We start with projections based on purely evolutionary computer system design trends, then include the impact of breakthroughs in processor design, memory packaging and optical interconnect technologies. Based on these projections, we motivate the development for a 1-pJ/b optical intrasystem interconnect technology that significantly increases system interconnect bandwidth and relieves the distance-based energy dependence of electrical alternatives. We show that improvements in compute, memory, and IO, when simultaneously applied, become a vision for many-chip photonically-interconnected modules that could lead to an order of magnitude improvement in energy efficiency in the 2020 timeframe. The vision hinges on a high-density, energy-efficient optical link that can connect electronic compute and memory elements across short chip-to-chip distances while also capable of kilometer or longer spans across data centers. We discuss the power budget to enable such a link and review experimental progress toward creating an ultra-dense, hybrid-integrated low-power silicon photonic link that will enable this vision.

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An ultralow power athermal silicon modulator

et al. 2014

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Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s−1), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p–n junction device that at 250 pm V−1 (30 GHz V−1) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications.

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Vertical Junction Silicon Microdisk Modulators at 25Gb/s

Cited by 9 publications

References 8 publications

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Energy-Efficient Photonics in Future High-Connectivity Computing Systems

An ultralow power athermal silicon modulator

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