Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes

Luo, Ruihong; Rao, Wentao; Chen, Tufu; Xiang, Peng; Liu, Minggang; Yang, Wencong; Wang, Yunqian; Yang, Yibin; Wu, Zhaohui; Liu, Yang; Jiang, Hao; Zhang, Baijun

doi:10.7567/jjap.51.012101

Cited by 5 publications

(1 citation statement)

References 22 publications

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“…[31] In addition, DBRs are usually applied in conventional p-side-up LEDs, which cannot eliminate the shadow effect by p-electrodes. [32] Therefore, the Si substrate transferring technique [33][34][35][36][37][38][39][40] is mainly adopted to eliminate the absorption of Si substrates and shadow effect, by inserting a metallic reflector. For instance, in our previous work, [40] we presented the embedded electrode LEDs (EE-LEDs) transferred from Si substrate onto Cu submount, which enhances the light output by 122%.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Liu¹,

Wang²,

Yang³

et al. 2015

Chinese Phys. B

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Crack-free GaN/InGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer (TCL), which could not be applied in the conventional p-side-up LEDs due to the electrode-shading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 mA, in comparison to conventional LEDs on Si.

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