2017
DOI: 10.1021/acs.nanolett.7b00906
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Vertical Graphene Growth on SiO Microparticles for Stable Lithium Ion Battery Anodes

Abstract: Silicon-based materials are considered as strong candidates to next-generation lithium ion battery anodes because of their ultrahigh specific capacities. However, the pulverization and delamination of electrochemical active materials originated from the huge volume expansion (>300%) of silicon during the lithiation process results in rapid capacity fade, especially in high mass loading electrodes. Here we demonstrate that direct chemical vapor deposition (CVD) growth of vertical graphene nanosheets on commerci… Show more

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Cited by 258 publications
(194 citation statements)
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“…Depending on the used precursors, the Si 2p3/2 , O 1s , and C 1s peaks are located in the range of 103.51–102.02, 532.91–532.37, and 284.78–284.16 eV, respectively. According to previous reports, the Si 2p3/2 peak locates at about 99 and 104 eV for elemental Si and SiO 2 , respectively, suggesting that the aforementioned five SiO x /C samples contain suboxidized Si (SiO x , x < 2) . The O 1s peaks ranging from 532.91 to 532.37 eV may arise from the overlapping of Si—O—Si, C—O—Si, and C—O—C peaks .…”
Section: Resultsmentioning
confidence: 59%
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“…Depending on the used precursors, the Si 2p3/2 , O 1s , and C 1s peaks are located in the range of 103.51–102.02, 532.91–532.37, and 284.78–284.16 eV, respectively. According to previous reports, the Si 2p3/2 peak locates at about 99 and 104 eV for elemental Si and SiO 2 , respectively, suggesting that the aforementioned five SiO x /C samples contain suboxidized Si (SiO x , x < 2) . The O 1s peaks ranging from 532.91 to 532.37 eV may arise from the overlapping of Si—O—Si, C—O—Si, and C—O—C peaks .…”
Section: Resultsmentioning
confidence: 59%
“…Because of the higher Si/O ratio for HMD (1:0) than that of HMDS (1:0.5), the product derived from HMD contains higher SiC content than that from HMDS, resulting in the higher XRD peak intensity of SiC for the product from HMD. With respect to the Raman spectra, two peaks located at ≈1332 and ≈1602 cm −1 were observed for all the samples (Figure b), being the D and G peaks characteristic of carbon materials, respectively . This indicates that all the SiO x /C samples contain elemental carbon.…”
Section: Resultsmentioning
confidence: 79%
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“…Miyachi et al demonstrated that the irreversible products of Li 2 O and Li 4 SiO 4 formed in the first cycle act as a buffer layer to alleviate the effect of volumetric change and prevent the inner SiO x from further contacting with the electrolyte to increase the coulombic efficiency (CE) . Shi et al reported that when graphene grows vertically on the SiO x surface through a chemical vapor deposition (CVD), a capacity of 1600 mAh g −1 can be obtained …”
Section: Introductionmentioning
confidence: 99%