Vertical GaN Shottky barrier diode with thermally stable TiN anode*

Self Cite

Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.

Section: Experiments and Characterizationmentioning

confidence: 85%

“…The epitaxial structure and the main processes were similar with our previous work. [15] The electrode material and the sputtering conditions are listed in Fig. 1.…”

Section: Experiments and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Du¹,

Li²,

Pu³

et al. 2022

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“…[1][2][3] Among the GaN-based power devices, Schottky barrier diodes (SBDs) possess the advantages of low forward turn-on voltage (V on ) and no minority carrier storage, which are beneficial to realize low conduction/switching loss and fast-switching speed. [4,5] Although high-performance vertical GaN-on-GaN SBDs have been investigated extensively along with the development of the freestanding GaN substrate, the commercial GaN substrate is still limited by the high cost and the small diameter. [6] On the other hand, GaN epitaxy on low-cost and largearea foreign substrates (silicon, sapphire, etc.)…”

Section: Introductionmentioning

confidence: 99%

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Wang

et al. 2022

A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

“…Vertical GaN Schottky barrier diodes (SBDs) are attractive for power-switching application due to their intrinsic low turn-on voltage, high breakdown voltage in small area, no surface trap, and good thermal stability. [1][2][3][4][5] Especially, with the development of low threading dislocation density (10 4 cm −2 -10 5 cm −2 ) free-standing GaN substrate, remarkable progress has been achieved over the past decades. However, the reported average breakdown electric field, which is the breakdown voltage divided by the thickness of the GaN drift layer, for GaN vertical SBD is usually smaller than 1 MV/cm, which is far below the theoretical value of 3 MV/cm.…”

Section: Introductionmentioning

confidence: 99%

Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure*

Du¹,

Zhou²,

Li³

et al. 2021

Self Cite

Band alignment between NiO x and nonpolar GaN plane and between NiO x and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO x /GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO x films. By fitting the Ga 3d spectrum obtained from the NiO x /GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO x . On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.