Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Abstract

A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation

“…For the D-PND, the dimensions and doping concentration of the double-layer n-type diamond were used for the study. The device performance (in particular, forward conduction characteristics and reverse breakdown voltage) was simulated by using the models reported in our previous work [32]. The key material parameters of the diamond were set according to reference [33].…”

High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

“…Then, the JBS diode was deemed to be breakdown when the maximum electric field reached 6 MV/cm. [19,20] pdiamond 1 ×10 16…”

“…Figures1(a)-1(c) show the device structures and parameters of the trenched SBD diode (T-SBD), the conventional T-JBS, and the proposed SET-JBS, respectively. The structure consists of three parts: the heavily doped p + -diamond region (0.5 µm in thickness and 1×1019 cm −3 in hole density), the p − -diamond drift region (3 µm in thickness and 1 ×10 16 cm −3 in hole density), and the n-diamond regions, which exist in the trenches. The Schottky (marked by red line) contact served as electrodes for different diode structures.…”