Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Oka, Tohru; Ueno, Yukihisa; Ina, Tsutomu; Hasegawa, Kazuhide

doi:10.7567/apex.7.021002

Cited by 209 publications

(141 citation statements)

References 22 publications

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“…By these properties, great attentions have been paid for GaN in applications to highly efficient power devices. GaN diodes and transistors with high breakdown voltages ( V B )□ have been extensively reported by many researchers . In a recent paper, the record V B of 4.7 kV combined with a low specific differential on‐resistance ( R on ) of 1.7 mΩ cm −2 was achieved .…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Hayashi

Ohta

Horikiri

et al. 2017

Physica Status Solidi (a)

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This paper presents electroluminescence intensity mapping on a p–n junction plane of vertical GaN diodes under forward‐biased conditions for the first time. By this mapping, it has been discovered that current crowding existed, corresponding to the naturally formed surface stripes on epitaxial layers grown on freestanding GaN substrates. Detailed analyses by AFM and TOF‐SIMS clarified that the concentration of doped Mg acceptors on one slope of the stripe was higher than that on the other slope. The higher Mg‐concentration region should have lower electric resistance, which would cause the current crowding. By improving the surface flatness, the current crowding was suppressed and a low specific on‐resistance was obtained.

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Section: Introductionmentioning

confidence: 99%

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Hayashi

Ohta

Horikiri

et al. 2017

Physica Status Solidi (a)

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“…Recent advances in bulk GaN growth technology have facilitated the development of vertical power devices such as Schottky barrier diodes, 1,2 p-n junction diodes, 3,4 and trench metaloxide-semiconductor field-effect transistors. 5 One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 10 15 cm À3 or less. Despite intensive research efforts, the performance of GaN-based power devices has remained insufficient because of an immature epitaxial growth process.…”

mentioning

confidence: 99%

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa

Ueno

Imabeppu

et al. 2017

Applied Physics Letters

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In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm−3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) electron mobility was as high as 1008 cm2 V−1 s−1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V−1 s−1 at an electron concentration of 2 × 1020 cm−3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V−1 s−1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

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“…These solutions cannot be easily implemented in GaN due to very low activation efficiency of implanted Mg acceptors. Hence, a DMOS structure may be preferable from the point of view of gate oxide reliability, however all experimental demonstrations of GaN MOSFETs till date have used a trench gate or UMOS structure [21,22].…”

Section: Resultsmentioning

confidence: 99%

Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV

Chowdhury

Guo

Liu

et al. 2016

Phys. Status Solidi C

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In recent years, different power transistors have been developed in silicon carbide (SiC) and gallium nitride (GaN) as replacements for silicon based IGBTs. This paper presents a simulation comparison of the static and dynamic performance of silicon IGBTs with different SiC and GaN based lateral and vertical power transistors (HEMT, MOSFET and IGBT) with breakdown voltage ratings between 1.2 kV to 15 kV. The strengths and weaknesses of different technologies which make them suitable at different voltage levels have been discussed. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Cited by 209 publications

References 22 publications

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV

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