Vertical Cavities and Micro-Ring Resonators

Alexandropoulos, Dimitris; Scheuer, Jacob; Adams, M.J.

doi:10.1007/978-3-642-27512-8_8

Cited by 1 publication

(1 citation statement)

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“…In the following, transfer matrix simulations were conducted to get an estimation on the absorption coefficient and the interface roughness within the DBR structures. [26][27][28][29][30] From previously performed transmission measurements on thick Ge-doped GaN layers with a carrier concentration of 2 × 10 19 cm −3 , we found an absorption coefficient of approximately 40 cm −1 for GaN:Ge. Taking this absorption coefficient into account, the simulation predicts a reduction of the maximum stopband reflectivity by 0.1%.…”

Section: Resultsmentioning

confidence: 60%

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza¹,

Berger²,

Sana³

et al. 2021

Jpn. J. Appl. Phys.

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We report on the realization of highly conductive and highly reflective n-type AlInN/GaN distributed Bragg reflectors (DBR) for use in vertical cavity surface emitters in a metalorganic vapor phase epitaxy process. While Ge-doping enables low-resistive n-type GaN/AlInN/GaN heterostructures, very high Ge doping levels compromise maximum optical reflectivities of DBRs. Simulations of the Bragg mirror's reflectivities together with structural analysis by X-ray diffraction reveal an increased absorption within the doped AlInN layers and interface roughening as major causes for the observed reduction of the optical reflectivity. By adjusting the Ge doping level in the AlInN layers, this structural degradation was minimized and highly conductive, 45-fold AlInN/GaN DBR structures with a maximum reflectivity of 99 % and vertical specific resistance of 5x10-4 Ωcm2 were realized.

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