Versorgungsstrukturen

Rössler, Wulf

doi:10.1007/3-540-27386-7_39

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Surface Energies1

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2010

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“…Estimation of surface energies is necessary for the modelling of the NW growth. Because of a high discrepancy in available data concerning the surface energies of NW sidewall planes [23,24,29,[36][37][38], it would be reasonable for us to start just with a simple consideration of the properties of the sidewall facets of NWs growing in the 1 1 1 direction. Figure 3 shows the crystal structure of the ZB and WZ III-V NWs.…”

Section: Surface Energiesmentioning

confidence: 99%

Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

Ren

Huang

Dubrovskiı̆

et al. 2010

Semicond. Sci. Technol.

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Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 • C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD.

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