Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

Ren, Xiaomin; Huang, Hui; Dubrovskiı̆, V. G.; Sibirev, N. V.; Назаренко, М. В.; Bolshakov, A D; Ye, X; Wang, Q; Huang, Yongqing; Zhang, X; Guo, Jingwei; Liu, X

doi:10.1088/0268-1242/26/1/014034

Cited by 27 publications

(27 citation statements)

References 42 publications

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“…Even though the Ga concentration in catalysts varied from size to size, nanowires can still reach the same height due to the limited As available in the vapor. Moreover, the dramatically slow growth of nanowires at the low V/III ratio can be considered as a near equilibrium process, 50 where the formation of low-energy {1100} side-facets (refer to Figure 1a) 51 and the formation of perfect crystal structure are favorable.…”

Section: Resultsmentioning

confidence: 99%

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Zhou¹,

Zheng²,

et al. 2015

J. Phys. Chem. C

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In this study, we demonstrate that by merely limiting the As flux, the growth behavior and structural quality of Au-catalyzed GaAs nanowires can be modulated in molecular beam epitaxy. With decreasing the As flux through lowering the V/III ratio, GaAs nanowire growth is found to be slow and defect-free wurtzite structured GaAs nanowires can be obtained regardless of catalyst sizes. While, in the As-enrich environment (such as at relatively high V/III ratio), thinner nanowires can grow longer with fewer planar defects. Based on our extensive morphological, structural and compositional investigations, it is found that GaAs nanowires grown under an As-limited condition can lead to a thermodynamically controlled growth process, while, when the nanowires grown under a relative high V/III ratio, a typical kinetically dominated process is observed. This study provides a new insight for controlling the structural quality of III-V nanowires by tuning the group-V flux.

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Section: Resultsmentioning

confidence: 99%

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Zhou¹,

Zheng²,

et al. 2015

J. Phys. Chem. C

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“…Twin free ZB GaAs NWs with diameter between 30 and 50 nm on typical length of some micrometers were grown by metal-organic vapor phase epitaxy (MOVPE) implementing controlled experimental parameters of temperature and V/III ratio, which should be low and high, respectively. [18][19][20] In this paper, we present the Au catalyst-assisted growth of GaAs nanowires by using the hydride vapor phase epitaxy (HVPE) process. HVPE makes use of GaCl growth precursors.…”

Section: Introductionmentioning

confidence: 99%

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

André

Lekhal

Hoggan

et al. 2014

The Journal of Chemical Physics

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High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy and micro-Raman spectroscopy revealed polytypism-free zinc blende (ZB) NWs over lengths of several tens of micrometers for a mean diameter of 50 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors GaCl of which high decomposition frequency after adsorption onto the liquid droplet catalysts, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the droplets. High influxes of Ga and As species then yield high axial growth rate of more than 100 μm/h. The diffusion of the Ga atoms in the liquid droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3 × 10(-9) m(2)/s. The fast diffusion of Ga in the droplet favors nucleation at the liquid-solid line interface at the center of the NW. This is further evidence, provided by an alternative epitaxial method with respect to metal-organic vapor phase epitaxy and molecular beam epitaxy, of the current assumption which states that this type of nucleation should always lead to the formation of the ZB cubic phase.

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“…Верхняя граница для химических потенциалов является доста-точно резкой, т. е. вблизи µ max ННК растут либо в одной, либо в другой фазе [8][9][10][11][12][13]. Рост ННК вблизи нижней границы может происходить с образованием политипов [10,[13][14][15][16].…”

Section: международный симпозиум "unclassified

“…Для экспериментального наблю-дения химический потенциал лучше всего связывать со скоростью роста ННК. Большие скорости роста ННК означают большие разности химических потенциалов, малые скорости роста ННК -малые разности хи-мических потенциалов [11]. Однако такое сопоставле-ние корректно делать только для квазистационарного роста ННК.…”

Section: международный симпозиум "unclassified

XXI Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si (111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy -=SUP=-*-=/SUP=-

Штром¹,

Сибирев²,

Убыйвовк³

et al. 2018

Физика И Техника Полупроводников

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A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

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Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

Cited by 27 publications

References 42 publications

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

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