Accurate modeling of heterogeneous catalysis requires the availability of highly accurate potential energy surfaces. Within density functional theory, these can—unfortunately—depend heavily on the exchange-correlation functional. High-level ab initio calculations, on the other hand, are challenging due to the system size and the metallic character of the metal slab. Here, we present a quantum Monte Carlo (QMC) study for the benchmark system H2 + Cu(111), focusing on the dissociative chemisorption barrier height. These computationally extremely challenging ab initio calculations agree to within 1.6 ± 1.0 kcal/mol with a chemically accurate semiempirical value. Remaining errors, such as time-step errors and locality errors, are analyzed in detail in order to assess the reliability of the results. The benchmark studies presented here are at the cutting edge of what is computationally feasible at the present time. Illustrating not only the achievable accuracy but also the challenges arising within QMC in such a calculation, our study presents a clear picture of where we stand at the moment and which approaches might allow for even more accurate results in the future.

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The incorporation of Si into vapor−liquid−solid GaAs nanowires often leads to p-type doping, whereas it is routinely used as an n-dopant of planar layers. This property limits the applications of GaAs nanowires in electronic and optoelectronic devices. The strong amphoteric behavior of Si in nanowires is not yet fully understood. Here, we present the first attempt to quantify this behavior as a function of the droplet composition and temperature. It is shown that the doping type critically depends on the As/Ga ratio in the droplet. In sharp contrast to vapor−solid growth, the droplet contains very few As atoms, which enhance their reverse transfer from solid to liquid. As a result, Si atoms preferentially replace As in GaAs, leading to p-type doping in nanowires. Hydride vapor phase epitaxy provides the highest As concentrations in the catalyst droplets during their vapor−liquid−solid growth, resulting in n-type dopant behavior of Si. We present experimental data on n-doped Sidoped GaAs nanowires grown by this method and explain the doping within our model. These results give a clear route for obtaining n-type or p-type Si doping in GaAs nanowires and may be extended to other III−V nanowires.