Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD

Abstract

We demonstrate a new doping technique for (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma of microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, glow discharge optical emission spectroscopy (GDOES) and electrical conductivity measurement. The average concentration of boron was 0.5 atomic % and the conductivity was 1.5 x 10-2 Ωcm, which showed irregular behavior at low temperature

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

“…Once well-defined hexagonal B-C-N structures can be synthesized, they will be applied as photocatalysts using tunable band gaps, catalysts using partially localized electrons, and sensors with partial chemical bonding with adsorbed molecules on these structures. Various experimental methods are now being developed 25,[38][39][40] for the controlled synthesis of these structures.…”

“…Experimentally, however, distinct physical properties predicted by calculation have not been confirmed well, despite the long history of research on this class of materials. [21][22][23][24][25] The primary reason for this is that physical properties, such as work function and band gaps, are very sensitive to structural variation. Although monolayer h-CBNs have been evaluated by computational studies, interlayer interaction has not been studied well.…”

N2plasma etching processes of microscopic single crystals of cubic boron nitride

“…We used compact microwave plasma CVD equipment that uses a microwave (2.45 GHz) antenna as the sample holder (ARIOS DCVD-51A-SSP) with laboratory-made modifications for doping and to optimize the design of sample holders. 27,28) We introduced 80 sccm Ar-20 sccm H 2 mixed gas (purity 99.995%) or N 2 gas (80 sccm; purity 99.995%) to study the etching behavior in the plasma; these gasses are important for the plasma CVD growth of diamond and cBN, respectively. The gas pressure was 6.0 kPa.…”

Formation of bismuth-core-carbon-shell nanoparticles by bismuth immersion during plasma CVD synthesis of thin diamond films

“…Method (1) has a problem of using toxic gases, whereas method (2) has the problem of a low throughput. We developed a simple and versatile method to supply foreign elements during the plasma CVD, i.e., the solid source immersion in the plasma for the diamond CVD [18], which is similar to the method developed by Kohn et al for delta-doping [19]. This method has an advantage of supplying various elements with a high concentration without the problems stated above.…”