Formation of bismuth-core-carbon-shell nanoparticles by bismuth immersion during plasma CVD synthesis of thin diamond films

Tamura, Takeshi; Takami, Tomohide; Kobayashi, Seigo; Nagahama, Taro; Yanase, Takashi; Shimada, Toshihiro

doi:10.1016/j.diamond.2016.07.015

Cited by 4 publications

(3 citation statements)

References 42 publications

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“…Once well-defined hexagonal B-C-N structures can be synthesized, they will be applied as photocatalysts using tunable band gaps, catalysts using partially localized electrons, and sensors with partial chemical bonding with adsorbed molecules on these structures. Various experimental methods are now being developed 25,[38][39][40] for the controlled synthesis of these structures.…”

Section: Interaction Between Layers In Double Layersmentioning

confidence: 99%

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

Xie¹,

Tamura²,

Yanase³

et al. 2018

Jpn. J. Appl. Phys.

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The effect of C doping to hexagonal boron nitride (h-BN) was examined by first principle calculations with the association of π-electron systems of organic molecules embedded in a two dimensional insulator. In mono-layered carbon doped structure, odd number doping of carbon atoms lead to a metallic properties with different work functions. A variety of electronic interactions was found in the interaction between two layers with odd number carbon substitution. Direct sp 3 covalent chemical bond is formed when C is replacing adjacent B and N in the different layers. Charge transfer complex between layers was found when the C is replacing next atoms, which results in narrow band gaps (e.g. 0.37eV).

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Section: Interaction Between Layers In Double Layersmentioning

confidence: 99%

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

Xie¹,

Tamura²,

Yanase³

et al. 2018

Jpn. J. Appl. Phys.

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“…We used compact microwave plasma CVD equipment that uses a microwave (2.45 GHz) antenna as the sample holder (ARIOS DCVD-51A-SSP) with laboratory-made modifications for doping and to optimize the design of sample holders. 27,28) We introduced 80 sccm Ar-20 sccm H 2 mixed gas (purity 99.995%) or N 2 gas (80 sccm; purity 99.995%) to study the etching behavior in the plasma; these gasses are important for the plasma CVD growth of diamond and cBN, respectively. The gas pressure was 6.0 kPa.…”

Section: Plasma Processesmentioning

confidence: 99%

N₂plasma etching processes of microscopic single crystals of cubic boron nitride

Tamura

Takami

Yanase

et al. 2017

Jpn. J. Appl. Phys.

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We studied the N 2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-µm-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces.

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“…[5][6][7] Whilst TMC's have been the subject of study for a number of decades, in recent years interest has begun to turn towards the later p-block metallic elements. 8,9 These elements offer not only chemistries that differ greatly from the transition metals, but can also be expected to display unique properties due to strong relativistic effects resulting from the presence of very heavy atomic nuclei.…”

Section: Introductionmentioning

confidence: 99%

First-principles characterisation of spectroscopic and bonding properties of cationic bismuth carbide clusters

Almeida¹,

Oliveira²,

Milne³

2021

Preprint

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Vibrational and electronic absorption spectra calculated at the (time-dependent) density functional theory level for the bismuth carbide clusters Bi n C + 2n (3 ≤ n ≤ 9) indicate significant differences in types of bonding that depend on cluster geometry.Analysis of the electronic charge densities of these clusters highlighted bonding trends consistent with the spectroscopic information. The combined data suggest that larger clusters (n > 5) are likely to be kinetically unstable in agreement with the cluster mass distribution obtained in gas-aggregation source experiments. The spectral fingerprints of the different clusters obtained from our calculations also suggest that identification of specific Bi n C + 2n isomers of should be possible based on infra-red and optical absorption spectroscopy.

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Formation of bismuth-core-carbon-shell nanoparticles by bismuth immersion during plasma CVD synthesis of thin diamond films

Cited by 4 publications

References 42 publications

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

N₂plasma etching processes of microscopic single crystals of cubic boron nitride

First-principles characterisation of spectroscopic and bonding properties of cationic bismuth carbide clusters

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Formation of bismuth-core-carbon-shell nanoparticles by bismuth immersion during plasma CVD synthesis of thin diamond films

Cited by 4 publications

References 42 publications

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

N2plasma etching processes of microscopic single crystals of cubic boron nitride

First-principles characterisation of spectroscopic and bonding properties of cationic bismuth carbide clusters

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N₂plasma etching processes of microscopic single crystals of cubic boron nitride