Verification of /spl pi/-equivalent circuit based microwave noise model on A/sub III/B/sub v/ HBTs with emphasis on HICUM

Herricht, J.; Sakalas, P.; Schröter, M.; Zampardi, P.J.; Zimmermann, Y.; Korndörfer, F.; Šimukovič, A.

doi:10.1109/mwsym.2005.1516953

Cited by 8 publications

(7 citation statements)

References 12 publications

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“…It is well known that the two shot noise sources of the HBT are correlated, and that this correlation can be approximated by the intrinsic transit-time [10]- [12]. The drawback so far was that this intrinsic time constant is not easily predicted.…”

Section: B Shot Noisementioning

confidence: 99%

Current Trends and Challenges in III-V HBT Compact Modeling

Rudolph

2008

2008 European Microwave Integrated Circuit Conference

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This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/ f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed. I. IGaAs-based HBTs have been for quite a while the devices of choice for power amplification in the lower GHz range, especially for use in mobile devices. The vast majority of GaAs-HBT MMICs fabricated today therefore are power amplifiers (PAs) designed to deliver around 1 W in the range 1 -2 GHz, powered from a battery. InP based HBTs are capable to achieve highest cutoff frequencies while maintaining reasonably high breakdown voltages. E.g., this technology is well suited to design modulator drivers for multi-Gbps optical links that require high voltage swings and highest switching speeds. Recently developed GaAs HBT technologies target base station amplifiers rather than mobile PAs, with tenfold bias supply voltage and output power: beyond 10 W at 2 GHz from a 28 V supply. This results in much higher output impedances, that allow for easier and, especially, broadband output matching.Since III-V HBTs have come to market more than two decades after their unipolar counterparts, compact models are not yet as well established. This can be seen from the fact that simply the number of models that are available in circuit simulators is much lower than the number of MESFET or HEMT models. There are mainly two modern HBT models commonly available. One is the FBH model that will be used as the reference model in this paper. The other one that follows the same philosophy although with different formulas, is the AgilentHBT model [1]. On the other hand, designers are often not sure if they can trust the model they get, if it is not well understood what effects are to be accounted for.It is the aim of this paper to review the state-of-the-art in III-V HBT modeling. The status of the models will be discussed, as well as some recent advancements, and finally some unsolved issues will be addressed. In order to keep this article readable while addressing all relevant issues, the different issues will be touched rather than providing an indepth discussion. For details please refer to the literature cited in each section. Collector Contact Base ContactEmitter Air Bridge Fig. 1. Micro-photograph of single-finger HBT from FBH Foundry. The 20 µm thick emitter airbridge serves as a heat spreader, that is capable of equalizing the temperature distribution in multi-finger devices at 28 V operation. The airbridge has been removed in the foreground in order to show the inner device. A. HBT Model RequirementsTo begin with, three of the expectations shall be recalled that led to the development of HBTs. These are • the capability to be operated at high power densities, • high linearity, and • low 1/ f noise. HBTs are vertical devices, see Fig. 1. The collector curren...

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Section: B Shot Noisementioning

confidence: 99%

Current Trends and Challenges in III-V HBT Compact Modeling

Rudolph

2008

2008 European Microwave Integrated Circuit Conference

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“…In order to force circuit simulators to compute correlation terms additionally, transformation ofthe input matrix into a diagonal matrix is performed. Here, the input matrix is expressed through a diagonal Dxy(j) and a transformation matrix T(/w): (4) where T+(cjw) is the corresponding adjoint matrix. Now the modified input matrix becomes:…”

Section: System Theory and Verilog-ams Implementationmentioning

confidence: 99%

“…For the bipolar transistors, correlation between base and collector shot noise plays a significant role at high frequencies [3] [4] [5] and is well described analytically in [2]. Unfortunately, implementation of correlated noise in a compact model is not straight-forward, and from a system theoretical approach a consistent implementation has neither been investigated yet, nor been done for bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

Modeling of High Frequency Noise in SiGe HBTs

Sakalas

Chakravorty

Schröter

et al. 2006

2006 International Conference on Simulation of Semiconductor Processes and Devices

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A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, was derived and implemented in the bipolar transistor compact model HICUM using Verilog-AMS. Simulations were performed using ADS 2005A. Results were tested against measured noise parameters for high-speed conventional and LEC doped SiGe HBTs. Perfect agreement between simulated and measured data confirmed model validity.

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“…By proper we mean that the elements of the electric model must reproduce the measured S-parameters and noise performances at the same time. The general strategy to derive simplified formulas to model HFN performances is to use an electric model-generally the -equivalent circuit [4]-and the use of the noisy four-pole theory developed by Rothe and Dalke [5]. In this approach, all the noise sources have to be moved at the input of the noiseless four-pole and lumped into two correlated voltage and current equivalent noise sources (named e n , i n , and e * n i n , respectively).…”

Section: Introductionmentioning

confidence: 99%

“…In this approach, all the noise sources have to be moved at the input of the noiseless four-pole and lumped into two correlated voltage and current equivalent noise sources (named e n , i n , and e * n i n , respectively). As stated in [4], the complexity of deriving HFN formulas arises when using sophisticated electric equivalent models because the computation of the set {e n , i n , e * n i n } becomes lengthy. This is the reason why researchers neglect some terms in the equivalent circuit while deriving simplified models.…”

Section: Introductionmentioning

confidence: 99%

Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

Ramírez‐García¹,

Aniel²,

Enciso-Aguilar³

et al. 2013

Semicond. Sci. Technol.

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We present a useful procedure to derive simplified expressions to model the minimum noise factor and the equivalent noise resistance of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors (HBTs). An acceptable agreement between models and measurements at operation frequencies up to 18 GHz and at several bias points is demonstrated. The development procedure includes all the significant microwave noise sources of the HBTs. These relations should be useful to model F min and R n for state-of-the-art IV-IV and III-V HBTs. The method is the first step to derive noise analyses formulas valid for operation frequencies near the unitary current gain frequency ( f T ); however, to achieve this goal a necessary condition is to have access to HFN measurements up to this frequency regime.

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Verification of /spl pi/-equivalent circuit based microwave noise model on A/sub III/B/sub v/ HBTs with emphasis on HICUM

Cited by 8 publications

References 12 publications

Current Trends and Challenges in III-V HBT Compact Modeling

Current Trends and Challenges in III-V HBT Compact Modeling

Modeling of High Frequency Noise in SiGe HBTs

Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

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