Vector spectroscopy for spin pumping

Lustikova, J.; Shiomi, Yuki; Saitoh, Eiji

doi:10.1103/physrevb.92.224436

Cited by 16 publications

(14 citation statements)

References 24 publications

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“…Also, the observed angular dependence of V asym is not analogous to the analysis presented by Lustikova et al. 42 This indicates that the voltage signal measured in our set-up is primarily due to the ISHE. Furthermore, the V sym increases linearly with radio frequency(RF) power as shown in the inset of Fig.…”

contrasting

confidence: 86%

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Large spin current generation by the spin Hall effect in mixed crystalline phase Ta thin films

et al. 2018

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Manipulation of the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque requires high spin Hall conductivity of the heavy metal. We measure inverse spin Hall voltage using a co-planar wave-guide based broadband ferromagnetic resonance set-up in Py/Ta system with varying crystalline phase of Ta. We demonstrate a strong correlation between the measured spin mixing conductance and spin Hall conductivity with the crystalline phase of Ta thin films. We found a large spin Hall conductivity of −2439 ( /e) Ω −1 cm −1 for low-resistivity (68 µΩ-cm) Ta film having mixed crystalline phase, which we attribute to an extrinsic mechanism of the spin Hall effect.

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contrasting

confidence: 86%

“…Figure 4 due to ISHE, as well as AMR and AHE. 42 In our measurements, we found V asym << V sym for the entire range of θ H . Also, the observed angular dependence of V asym is not analogous to the analysis presented by Lustikova et al.…”

supporting

confidence: 49%

Large spin current generation by the spin Hall effect in mixed crystalline phase Ta thin films

et al. 2018

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“…For understanding the above-mentioned scenario quantitatively, it is useful to separate the V -H curves into a symmetric (Lorentzian) component V s i and an antisymmetric (diffusive) component V a i at the resonance magnetic fields H = H r i (i = H, L) [30]. [In Figs.…”

Section: Resultsmentioning

confidence: 99%

“…This charge accumulation is detected as an electromotive force (EMF) between the sample edges. However, we need a careful analysis of the EMF because galvanomagnetic effects such as planar Hall effect (PHE) and anomalous Hall effect (AHE), which are not directly related to the spin-charge current conversion, are incorporated in the EMF in addition to the ISHE [29,30]. Moreover, the EMF can be influenced by thermal effects such as Seebeck effect and longitudinal spin-Seebeck effect (LSSE) [31,32].…”

Section: Introductionmentioning

confidence: 99%

Observation of the inverse spin Hall effect in the topological crystalline insulator SnTe using spin pumping

et al. 2017

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Topological crystalline insulator SnTe is a promising material for future spintronics applications because of the strong spin-orbit coupling and surface states protected by the mirror symmetry of the crystal. In this paper, using a high-quality epitaxial ( 001)-oriented Fe/SnTe/CdTe/ZnTe heterostructure grown on GaAs, we successfully observe the inverse spin Hall effect in SnTe induced by spin pumping, which is confirmed by detailed analyses of the dependence of the electromotive force on the microwave power, magnetic-field angle, and temperature. By a rough estimation, a relatively large spin Hall angle of ∼0.01 is obtained for bulk SnTe at room temperature. This large value may be partially caused by the surface states. Our result suggests that SnTe can be used for efficient spin-charge current conversion.

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“…Thus, for spin pumping experiments, the measured emf V H includes contributions from both symmetric and asymmetric voltages, and the actual ISHE voltage V ISHE is estimated by a proper treatment of the measured data. It was reported 30,36,59,60 , that the symmetric voltage can also include contributions from PHE and galvanomagnetic effects in the metallic FM layer due to the electric and magnetic field components of the microwave. However, the angular dependence of the emf w.r.t.…”

Section: Detection Of Spin Hall Effect In N-gan:simentioning

confidence: 99%

Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtziten-GaN:Si

et al. 2016

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Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III-nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and related phenomena. Spin pumping is an efficient mechanism for the inception of spin current and its conversion into charge current in non-magnetic metals and semiconductors with Rashba SOC via spin Hall effects. We report on the generation in n-GaN:Si -at room temperature and through spin pumping -of pure spin current, fundamental for the understanding of the spin dynamics in these non-centrosymmetric Rashba systems. We find for n-GaN:Si a spin Hall angle θSH=3.03 × 10 −3 , exceeding by one order of magnitude those reported for other semiconductors, pointing at III-nitrides as particularly efficient spin current generators.

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Vector spectroscopy for spin pumping

Abstract: We propose a method to separate the inverse spin Hall effect (ISHE) from galvanomag- arXiv:1601.03588v1 [cond-mat.mes-hall]

Cited by 16 publications

References 24 publications

Large spin current generation by the spin Hall effect in mixed crystalline phase Ta thin films

Large spin current generation by the spin Hall effect in mixed crystalline phase Ta thin films

Observation of the inverse spin Hall effect in the topological crystalline insulator SnTe using spin pumping

Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtziten-GaN:Si

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