VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

Bacou, Alexandre; Hayat, Ahmad; Rissons, Angélique; Яковлев, В.; Syrbu, A.; Mollier, Jean-Claude; Kapon, E.

doi:10.1109/lpt.2009.2020805

Cited by 13 publications

(5 citation statements)

References 8 publications

(10 reference statements)

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“…Based on f p and our S21 data we determine the resonance relaxation frequency f r and the intrinsic damping γ . The influence of the parasitic elements [15] can be de-embedded to obtain the intrinsic frequency response of our VCSELs. This procedure also allows us to determine several intrinsic device parameters including the gain slope coefficient, photon lifetime, and spontaneous emission recombination lifetime [16].…”

Section: Equivalent-circuit Model For Our Vcselsmentioning

confidence: 99%

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Lott

Wolf

et al. 2015

IEEE Photon. Technol. Lett.

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The temperature dependence of the impedance characteristics of high bit rate, highly temperature-stable 980-nm oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) is investigated. A small-signal equivalent circuit model is fitted to measured small-signal reflection S11 and S21 scattering parameters across a large range of operating bias currents, temperatures, and oxide-aperture diameters to extract the circuit elements, −3 dB modulation bandwidth, relaxation resonance frequency, and parasitic cutoff frequency for each particular operating condition. The parasitic cutoff frequency of our small oxide-aperture diameter VCSELs is highly temperature insensitive from room temperature up to 85°C, and does not limit our VCSELs' maximum data transmission rate. Finally, the dependence of the impedance characteristics and modulation bandwidth of our VCSELs on the oxide-aperture diameter is analyzed at 25°C and 85°C. The larger capacitance is the main reason of our larger aperture VCSELs, compared with smaller aperture VCSELs, have a lower parasitic cutoff frequency.

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Section: Equivalent-circuit Model For Our Vcselsmentioning

confidence: 99%

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Lott

Wolf

et al. 2015

IEEE Photon. Technol. Lett.

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“…Thus, high output and stable lateral coupling can be expected. We calculated the wavelength detuning by using a transfer matrix method [25,26,27]. A structure of a VCSEL with 4-pairs top semiconductor DBR and 980 nm center wavelength is assumed.…”

Section: Device Structure and Modellingmentioning

confidence: 99%

Lateral integration of VCSEL and amplifier with resonant wavelength detuning design

Takanohashi

et al. 2020

IEICE Electron. Express

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We propose and demonstrate the lateral integration of a VCSEL and a slow-light VCSEL amplifier with in-plane resonant wavelength detuning design, enabling the unidirectional coupling and stable singlemode operation with good beam quality. The modelling and simulation result of the wavelength detuning and unidirectional coupling is shown. A slow light laterally coupled from the VCSEL to the amplifier can be amplified uniformly when the amplifier is pumped above the threshold current. We also present the experimental data of the beam quality, output power and spectrum. The measured data show the increased single-mode output power with good beam quality in comparison with conventional VCSELs. A record single-mode power (40 mW) with narrow beam divergence (<0.06°) is presented.

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“…We then simulate the parasitic response and determine a parasitic 3-dB bandwidth BW P . Based on this information we de-embed the parasitic influence [22] to obtain the intrinsic frequency response of our VCSELs and determine the resonance relaxation frequency f r and the intrinsic damping γ, leading to a more detailed understanding of the devices and insight on how to improve the performance of subsequent devices. We measure S 11 and S 12 of our VCSELs by measuring the real part (resistance) and an imaginary part (reactance) of the complex impedance vector using a reflection coefficient measurement with a HP 8722C network analyzer.…”

Section: Equivalent-circuit Modelmentioning

confidence: 99%

Extraction and analysis of high-frequency response and impedance of 980-nm VCSELs as a function of temperature and oxide aperture diameter

Wolf

Moser

et al. 2015

SPIE Proceedings

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Vertical-cavity surface-emitting lasers (VCSELs) are decisive cost-effective, energy-efficient, and reliable light sources for short-reach (up to ~300 m) optical interconnects in data centers and supercomputers. To viably replace copper interconnects and advance to on-chip integrated photonics, reliable VCSELs ideally must be able to operate highly energy efficient, but at large bit rates and without cooling up to 85 °C, with immunity to temperature variations. Our 980 nm VCSELs achieve such temperature-stable, energy-efficient, and high-speed operation coincidently. Record low 139 fJ/bit of dissipated heat for 35 Gbit/s error-free data transmission at 85 °C is reported. Careful design of both the VCSEL's epitaxial structure and device geometry is of essence. Introducing a suitable gain-to-etalon wavelength offset simultaneously improves the temperature-stability, the maximum bit rate at high temperatures, and the energy efficiency. Tuning the photon lifetime additionally increases the bandwidth by changing the relation between damping and resonance relaxation frequency. Systematic temperature-dependent and oxide aperture-diameter-dependent measurements, including static L-I-V curves and emission spectra, small signal analysis, and data transmission experiments are reported. The modulation bandwidth, the parasitic cut-off frequency, the relaxation resonance frequency, lumped-circuit elements, and the K-and D-factors are derived, useful for energy-efficient optical interconnects based on 980 nm VCSELs.

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VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

Cited by 13 publications

References 8 publications

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Lateral integration of VCSEL and amplifier with resonant wavelength detuning design

Extraction and analysis of high-frequency response and impedance of 980-nm VCSELs as a function of temperature and oxide aperture diameter

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