Varistor performance of nanocrystalline Zn–Bi–O thin films prepared by reactive RF magnetron sputtering at room temperature

Miśta, W.; Ziaja, J.; Gubański, A.

doi:10.1016/j.vacuum.2003.12.141

Cited by 20 publications

(4 citation statements)

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“…Bismuth doping of ZnO has not been extensively studied. Bismuth as dopant in ZnO has been used in the past for exploring application as varistors [10,11]. Moreover, two papers [12,13] which have reported the acceptor states in bismuth-doped ZnO either have phase segregation problems or they fail to realize p-type conduction.…”

mentioning

confidence: 99%

Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Lee¹,

Subramaniam²,

Lee³

et al. 2011

EPL

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Bismuth-doped p-type ZnO films were grown on sapphire (0001) substrates by pulsedlaser deposition at 600 • C in 1 mT oxygen pressure. The photoluminescence (PL) property of the as-grown and post-annealed Bi-doped p-type ZnO films at 10-300 K has been investigated. A wellresolved PL spectrum was obtained with acceptor bound exciton emission and conduction band to acceptor transition giving direct evidence for the creation of acceptors. The acceptor energy level of the bismuth dopant is found to be 0.13 eV above valance band. The binding energy between the acceptor and the exciton measured as a function of temperature was found to be 14 meV. A hole concentration of 5.36 × 10 18 cm −3 and a mobility of 8.9 cm 2 /Vs was obtained for 3% bismuth-doped and annealed ZnO thin films. This study suggests that bismuth is an excellent dopant to obtain stable and reproducible p-type conductivity in ZnO for the application in optoelectronic devices.

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mentioning

confidence: 99%

Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Lee¹,

Subramaniam²,

Lee³

et al. 2011

EPL

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“…The breakdown voltage was 20 V, and the nonlinear coefficient was 10. Miśta et al [14] prepared the Bi-doped films on the ITO/Glass using Zn-Bi target by the RF magnetron sputtering technique. The results displayed that the breakdown voltage was from a few volts to dozens of volts, and the nonlinear coefficient was 15.…”

Section: Resultsmentioning

confidence: 99%

“…ZnO films with good quality were grown through different methods, such as hydrothermal method [8], sol-gel technique [9], electron-beam evaporation [10], pulse laser deposition [11], and magnetron sputtering [12]. Among all, magnetrons puttering shows several advantages such as good adhesion between film and substrate, low substrate temperature, scalability to large areas, great thickness uniformity with a deposition rate range, and high film density [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

Zhao

Hua

Chen

et al. 2016

Journal of Nanotechnology

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The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

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“…strongly depend on various factors such as: the structure and orientation, composition, thickness, grain size, type and temperature of substrates etc. [8][9][10][11][12][13][14][15]. In addition, in the case of the magnetic thin films, their magnetic properties are conditioned by the magnetic domain structure [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Nanoscopic Investigation of Magnetic Thin Films by Means of Magnetic Force Microscopy Technique

2016

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In the article the results of the research aimed at the recognition of the correlation between the Ni-Fe film thickness and its magnetic domain structures are described. Magnetic thin films were prepared by pulse magnetron sputtering. Obtained thin film thicknesses were in the range of 47.6-326.0 nm. Magnetic domain structures were imaged using magnetic force microscopy. In order to obtain quantitative description of magnetic domains images, the algorithms designed for topography parameters determination were applied, enabling the comparison of specific factors related to the magnetic properties of the samples. Utilized approach provided the analysis of the impact of sputtering parameters on the morphological and magnetic properties of obtained films.

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Varistor performance of nanocrystalline Zn–Bi–O thin films prepared by reactive RF magnetron sputtering at room temperature

Cited by 20 publications

References 10 publications

Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

Nanoscopic Investigation of Magnetic Thin Films by Means of Magnetic Force Microscopy Technique

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