Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Lee, J. W.; Subramaniam, N. Ganapathi; Lee, J. C.; S, S. Kumar; Kang, Tae Won

doi:10.1209/0295-5075/95/47002

Cited by 27 publications

(13 citation statements)

References 35 publications

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“…Signal in this range for S0 was shown also as reference. With the similarly reported value (Lee et al 2011), Bi 3+ may formed in the film. Fig.…”

Section: Methodssupporting

confidence: 79%

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Photocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysis

Lin¹,

Hsu²,

Lan³

et al. 2015

Advances in nano research

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The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at 450 o C with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration 6.13×10 16 cm-3 can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration 4.44×10 17 cm-3 can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

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“…Signal in this range for S0 was shown also as reference. With the similarly reported value (Lee et al 2011), Bi 3+ may formed in the film. Fig.…”

Section: Methodssupporting

confidence: 79%

“…The intensified signal is at wavelength 372.6 nm (3.328eV). This peak, with less energy compared to D o X which can be observed by other Bi-doped ZnO (Lee et al 2011), is attributed to A o X caused by Bi doping. The emission wavelength 381.3 nm (3.252eV) and 390.3 nm (3.177eV) may attribute to the phonon replica of A o X.…”

Section: Resultsmentioning

confidence: 63%

Photocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysis

Lin¹,

Hsu²,

Lan³

et al. 2015

Advances in nano research

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“…Bismuth doping in ZnO has been carried out by a few groups in order to study varistors 16 , and Bi induced acceptor states 17 18 . Our recent study on Bi-doped ZnO shows a stable p -type conductivity of the films 19 . To our knowledge none of the groups so far have explored the existence of a ferromagnetic phase in Bi doped ZnO and its atomic origin.…”

mentioning

confidence: 81%

Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

Lee

Subramaniam

Kowalik

et al. 2015

Sci Rep

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The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.

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“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition

Cited by 27 publications

References 35 publications

Photocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysis

Photocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysis

Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

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