Variations of temperature coefficient and noise in thin Al and Al/Si resistors subjected to high current density

Diligenti, A.; Neri, Bruno; Nannini, Andrea; Ciucci, S.

doi:10.1007/bf02666018

Cited by 11 publications

(5 citation statements)

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“…Even with the quadratic law (II) the R(t) increases linearly up to 1.2 R(0), and then undergoes the steep increase that leads to the catastrophic failure. In experiments [2,3,11] the final failure is observed after an increase of only a few percent above R(0), better reproduced by (1).…”

Section: Resultsmentioning

confidence: 82%

“…Figure 6 shows the results of three Monte Carlo runs for each of three different average grain sizes, i. Additional information on this aspect can be obtained from the noise spectrum of R(t) in the initial phase: it is well known from experiments [2,3,8,11] that the spectral density of the noise associated with electromigration has a characteristic 1/f γ behaviour. Experimental values of γ collected from 20 published papers are shown in table 1 of [8]: γ is found to be between 0.7 and 2.3.…”

Section: Resultsmentioning

confidence: 99%

“…The γ exponents obtained from a least squares linear fit on the logarithmic scale are, again, between 1.96 and 2. The total noise power in the initial phase of linear resistance increase is roughly proportional to the inverse cube of the stripe width: the product P N W 3 , where P N is the noise power and W the stripe width, is equal, in arbitrary units, to 0.178, 0.226 and 0.28 for a width of 10, 30 and 90 nodes, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we focus on the simulation of the electromigration process in polycrystalline metal lines, which is a major problem for the evolution of ULSI technology: as the widths of metal interconnects shrink and current densities increase, failures induced by electromigration can occur in relatively short times and reduce considerably the average circuit lifetime. Many efforts have been made to understand and control the electromigration process, by means of experiments [1][2][3] and theoretical modelling [4][5][6][7]. Experiments have allowed us to establish the major role played by atom diffusion along external surfaces and grain boundaries [1].…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of electromigration in polycrystalline metal stripes

Pascoli¹,

Iannaccone²

2000

Semicond. Sci. Technol.

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We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal stripes. Stripes with different average grain size can be generated with Voronoi tesselation, and mapped onto a network of resistors. The proposed model includes the major role played by grain boundaries and by the current density redistribution within the stripe following void formation. Simulations of stripes with different grain sizes and different widths are shown, and a few expressions for the failure probability are compared on the basis of their capability of reproducing the experimental results. In addition, electromigration noise has been computed, recovering the characteristic 1/f γ (γ ≈ 2) behaviour. The substantial qualitative agreement between our calculations and the experimental results is a convincing test of the capability of the model proposed to include the relevant physics.

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Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of electromigration in polycrystalline metal stripes

Pascoli¹,

Iannaccone²

2000

Semicond. Sci. Technol.

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“…It is generally recognized [12,[25][26][27] that this noise should exhibit a 1/f c frequency dependence with a noise exponent c typically close to 2 and always well above 1 [12]. This noise is thought to be connected with the process of vacancy creation and hence its total power should be related to the intensity of the electromigration process.…”

Section: Electromigration Noise Vs Mtfmentioning

confidence: 99%

Noise and reliability in simulated thin metal films

Pascoli

Iannaccone

2008

Microelectronics Reliability

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a b s t r a c tMany macroscopic aspects of electromigration damage in thin metal films have been investigated by means of Monte Carlo simulations based on simplified physical model. The employed model, can be described as a middle-scale model, in which the physical system is modeled with a high level of abstraction, without a detailed atomic physical model of the system.Among the many effects of the electromigration phenomenon, the simulator has been used to investigate several statistical properties of electromigration failure and the noise behaviour.Notwithstanding this simplicity, it is able to generate results in good agreement with many experimental observations: the lognormal distribution of failures, dependence of the mean time to failure from stress current and film geometry, Black exponent, noise statistics.Furthermore, this simulations confirmed a significant correlation between electromigration noise in the initial phase of stress and time to failure which has been suggested by a few experimentalists. This correlation can be usefully exploited as an early indication of the onset of electromigration damage on a per-sample basis.

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