Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Santi, Carlo De; Meneghini, Matteo; Carraro, S.; Vaccari, Simone; Trivellin, Nicola; Marconi, Stefano; Marioli, Michael Simone; Meneghesso, G.; Zanoni, Enrico

doi:10.1016/j.microrel.2013.07.053

Cited by 8 publications

(1 citation statement)

References 19 publications

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“…8,[19][20][21][22] Its value was chosen in order to minimize second-order effects that can be present in devices submitted to thermal storages such as the variation of the series resistance, 23 the degradation of the ohmic contact, 24 possible changes in the composition of the quantum wells, 25,26 problems related to the passivation, 27 and the activation of the p-type dopant. [28][29][30] All these mechanisms concur with the annealing of the irradiation-generated defects at high temperature, and can lead to an erroneous identification of the physical cause responsible for the variation of the characteristics during the recovery tests.…”

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confidence: 99%

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Santi

Meneghini

Trivellin

et al. 2014

Applied Physics Letters

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This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10 11 , 10 13 , and 10 14 p þ /cm 2 ). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 C). V C 2014 AIP Publishing LLC.

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confidence: 99%

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Santi

Meneghini

Trivellin

et al. 2014

Applied Physics Letters

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Physics and Technology of AlGaInN‐Based Laser Diode

Schwarz

2021

Digital Encyclopedia of Applied Physics

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Laser diodes in the green, blue, violet, and ultraviolet spectral range are made from the binary compound semiconductors AlN, GaN, and InN and their ternary and quaternary mixed crystals. The fundamental properties of these AlGaInN laser diodes are introduced. These are double‐heterostructure laser diodes with separate confinement of electrons and holes in quantum wells and photons in an optical waveguide. A rate equation description of the static and temporal behaviors of optical output power and carrier density is introduced, as are substrates, crystal growth, and microtechnology processing methods. The routes toward longer wavelength in the green spectral region, shorter wavelength ultraviolet lasing, and higher power operation in broad‐area laser diodes are discussed. Several different realized laser designs, including vertical‐cavity surface‐emitting lasers (VCSELs), multi‐section short‐pulse lasers, and distributed Bragg reflector (DBR) lasers are introduced. The family of AlGaInN laser diodes constitutes a large variety of applications, as outlined at the end of the article.

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Study on Degradation of Deep‐Ultraviolet Laser Diode

Zhang,

Yoshikawa,

Kushimoto

et al. 2024

Physica Status Solidi (a)

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The degradation of an AlGaN‐based deep‐ultraviolet laser diode during operation is studied. A rapid increase in threshold current without any facet mirror damage under direct current stress below the threshold current is observed, which is considered to limit the lifetime of continuous wave lasing to the level of seconds. The evolution of current–light and current–voltage characteristics suggests that the dominant mechanism of degradation is the increased loss of carriers before they can reach the active layer, i.e., the decrease in carrier injection efficiency. The decrease in emission intensity, which is more pronounced at lower current densities, and subsequent increase in sub‐threshold current indicate the increase in defect density under current stress, which is similar to the well‐analyzed degradation mechanism found in AlGaN‐based light‐emitting diodes.

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Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Cited by 8 publications

References 19 publications

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Physics and Technology of AlGaInN‐Based Laser Diode

Study on Degradation of Deep‐Ultraviolet Laser Diode

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