Variation of light emitting properties of ZnO thin films depending on post-annealing temperature

Kang, Hong Seong; Kang, Jeong Seok; Pang, Seong Sik; Shim, Eun Sub; Lee, Sang Yeol

doi:10.1016/s0921-5107(02)00730-4

Cited by 118 publications

(41 citation statements)

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“…To measure the current-voltage dependence and to find film resistivity, onto the ZnO samples Al contacts were deposited [1]. The obtained C-V dependence was linear, and the resistivity of as-prepared ZnO films was estimated to be 2-4·10 -2 Ωcm, which is close to the previously reported resistivity of 2·10 −2 Ωcm for undoped ZnO films deposited at 400 °C and a partial oxygen pressure of 350 mTorr [4]. The resistivity of films annealed in vacuum increased ~ 10 times, whereas that of films annealed in air -10 4 times.…”

Section: Resultssupporting

confidence: 82%

“…The optimal substrate temperature for deposition of highly transparent ZnO thin films with low resistivity is known to be 350-400 °C [2,4]. However, at higher substrate temperature the growth of films slows down owing to a high desorption rate of deposited atoms; in this case, for the growth at high substrate temperature a longer time is needed, besides, more targets are consumed.…”

Section: Introductionmentioning

confidence: 99%

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Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser Deposition

Polyakov¹,

Petruhin²,

Grigorjeva³

et al. 2009

Latvian Journal of Physics and Technical Sciences

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ZnO thin films were deposited by pulsed laser deposition (fluence 2.2 J/cm 2 ) in vacuum on different substrates kept at room temperature. This temperature allowed for fast film growing, however the as-prepared films had low transparency. To improve this optical property, keeping up at the same time the high electric conductivity of the films, post-annealing procedures in vacuum and in air were carried out. The influence of these procedures on the optical absorption, photoluminescence and electrical properties has been investigated. It is shown that the annealing in air improves only the transparency of such a film, however its conductivity decreases markedly. In turn, vacuum annealing for 3 min. at 600° C results in better transparency of the films, with their electric conductivity kept high.

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Section: Resultssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser Deposition

Polyakov¹,

Petruhin²,

Grigorjeva³

et al. 2009

Latvian Journal of Physics and Technical Sciences

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“…ZnO, a direct wide band gap (3.37 eV) semiconductor with large exciton binding energy (60 MeV) and high transparency in visible region, is widely used in UV light emitting devices [1,2], surface acoustic wave devices [3,4], transparent electronics [5,6], thin film transistors [7,8], and random lasers [9,10].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

Zhang

Wang

et al. 2010

Ionics

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In this work, ZnO thin films were synthesized by sol-gel method on glass substrates followed by calcinations on different temperatures. The effect of annealing temperature on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffraction and atomic force microscope. The optical properties were studied by a UV-visible spectrophotometer. The results show that all the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure. With the increasing annealing temperature (mse.ufl.edu), the intensity of (002) peak, particle size, surface RMS roughness, and absorbance of the ZnO thin films were increased as well. On the contrary, the transmittance and optical band gaps were decreased.

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“…The identification of the recombination centre and mechanisms responsible for many of the luminescence properties is still unclear. Various models were proposed to illustrate the green emission in ZnO [4,5], for example, the emissions involving O-vacancy (V O ) [6][7][8], interstitial Zn and O [9], Zn-vacancy (V Zn ) [10][11][12] and an electronic transition from an interstitial Zn to a Zn-vacancy [10] and extrinsic impurities such as substitution N b [13]. Theoretical investigations were also reported in order to provide the energy levels * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%