Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

Stassinopoulos, E. G.; Brucker, G. J.; Gunten, O. Van; Kim, H.S.

doi:10.1109/23.45444

Cited by 44 publications

(9 citation statements)

References 14 publications

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“…None of these cases can be represented with cross section as a smooth function of LET. The devices that led to the discontinuities shown in figure two are the following: a) 6504RH, CMOS on epi (18) The structure was discussed by McNulty (17) and in many earlier papers. b) GaAs complementary heterostructure insulated gate FET(5).…”

Section: Data Discontinuitiesmentioning

confidence: 99%

Geometrical factors in SEE rate calculations

Petersen

Pickel

Smith³

et al. 1993

IEEE Trans. Nucl. Sci.

104

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Section: Data Discontinuitiesmentioning

confidence: 99%

Geometrical factors in SEE rate calculations

Petersen

Pickel

Smith³

et al. 1993

IEEE Trans. Nucl. Sci.

104

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“…Past work on older technologies exploring the combined effects of total dose and single event effects showed that exposing devices to ionizing radiation can degrade the proton [9], [10] and heavy-ion single-event upset (SEU) hardness [11], [12]. Axness et al [11] attributed the increase in SEU sensitivity with total dose for these technologies with relatively thick gate oxides to large transistor threshold voltage cell imbalances in the memory cells.…”

Section: Proton-induced Single-event Upsetmentioning

confidence: 99%

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Schwank

Shaneyfelt

Dodd

et al. 2009

IEEE Trans. Nucl. Sci.

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Proton-induced single-event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects.

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“…The use of the Weibull function to parameterize the experimental data removes questions about considerations of discontinuities and scatter in the data. Integration approaches have been used by several previous authors [17,20,37,38]. None of these authors recognized that the integration variable corresponded to a range of device sensitivities.…”

Section: Determination Of Sensitive Volume Dimensionsmentioning

confidence: 99%