Geometrical factors in SEE rate calculations

Abstract

The prediction of single event rates depends upon a number of geometrical factors that affect the interpretation of the ground test data and the approach to rate calculations. This paper presents a critical review of these factors. The paper reviews heavy ion rate prediction methods and recommends a standard approach.

The Rate of Single Event Upsets in Electronic Circuits onboard Spacecraft

“…At the same time, some authors refined expression (4) in order to find the function σ ion (L, θ, ϕ) having in mind the finite thickness of sensitive layer z 0 [38] or the dependence of the SEE cross section on azimuth angle [39]. In addition, it has been found in [40] that for modern VLSIC of dynamic memory with super-large degree of integration (more than 4M) significant deviations from the law σ ion (L, θ, ϕ) = σ(L ef )cosθ may take place.…”

“…Points represent experimental data[38,39] and curves are the approximations of experimental data by formula(8).…”

Radiation Effects in Si CMOS Platforms

“…Also see [28], [29], [88], [120], [121], [123], [124], [125], [126] and [128] 3.6 Proton-and Neutron-Induced SEEs…”

Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

“…The sensitive volume is used to determine how much energy is deposited from an ion event in a region of interest in a semiconductor device. The methods of obtaining the dimensions of the RPP have been refined and debated since its inception [25][26][27][28][29][30][31], but are typically defined by a combination of theory, technology process information, and experimental analysis. The charge collected from the energy deposited in the SV must be greater or equal to the critical charge of the device for a SEU to be recorded.…”