Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor

Abdia, R.; kaaouachi, A. El; Nafidi, A.; Biskupski, G.; Hemine, J.

doi:10.1016/j.sse.2009.02.002

Cited by 24 publications

(10 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several experimental measurements of NMR have been confronted with the theoretical expression of Entin-Wohlman on many insulating materials. The authors found consistent results with theoretical predictions of quantum interference in the two VRH regimes of Mott and of Efros Shklovskii [26,[37][38][39].…”

Section: Results Discussion and Conclusionsupporting

confidence: 78%

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Sybous¹,

kaaouachi²,

Hemine³

et al. 2012

JMP

View full text Add to dashboard Cite

We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moment

show abstract

Section: Results Discussion and Conclusionsupporting

confidence: 78%

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Sybous¹,

kaaouachi²,

Hemine³

et al. 2012

JMP

View full text Add to dashboard Cite

show abstract

“…Whereas, the value n=2 means that the DOS varies in the vicinity of the Fermi level and p=0.5, corresponding to ES VRH with creation of CG (Equation (2)). Both VRH regimes have been widely shown in several materials [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 87%

“…It has been invoked to explain the conduction in several compounds, such as, semiconductors [5][6][7][8], semiconductormetal alloys [9] and granular films [10,11].…”

Section: Introductionmentioning

confidence: 99%

Hopping conduction in amorphous silicon-chromium films at very low temperature

Errai¹,

kaaouachi²,

Idrissi³

et al. 2014

AIP Conference Proceedings

View full text Add to dashboard Cite

“…The experimental situation has been confusing for some time, with both values of p being observed. Mott VRH and ES VRH regimes have been widely observed in many types of disordered materials [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

Narjis¹,

kaaouachi²,

Sybous³

et al. 2012

JMP

View full text Add to dashboard Cite

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys

show abstract

Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor

Cited by 24 publications

References 23 publications

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Hopping conduction in amorphous silicon-chromium films at very low temperature

Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys

Contact Info

Product

Resources

About