Variable Range Hopping Conduction in CuInSe₂ in the Presence of a Coulomb Gap

Abstract

Electrical conduction by Mott's variable range hopping mechanism and cross-over above liquid helium temperatures in the same samples to Efros and Shklovskii's type conduction in the presence of a Coulomb gap is observed in p-type CuInSe2. The behaviour of the hopping parameters is discussed.

Metallic magnetoconductivity in copper gallium telluride

“…In the present work, extending our earlier work on the electrical transport properties of Cu ternaries [7][8][9][10][11][12][13][14][15][16], we report on the metallic magnetoconductivity in p-type CuGaTe 2 . The explanation of the observed negative magnetoresistance (NMR) on the metallic side of the metal-insulator transition (MIT) at low magnetic fields is based generally on the so-called 'weak localization' phenomenon.…”