Localization and Electron-Electron Interaction Effects in p-CuGaTe2

Essaleh, L.; Wasim, S. M.; Marín, Gerardo; Choukri, E.; Galibert, J.

doi:10.1002/(sici)1521-3951(200105)225:1<203::aid-pssb203>3.0.co;2-g

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Deep defect related photoluminescence in heavily doped CuGaTe₂ crystals

Jagomägi

Krustok

Grossberg

et al. 2006

Physica Status Solidi (a)

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CuGaTe 2 samples very often exhibit optical and electrical properties of heavily doped semiconductors. This paper investigates the low temperature photoluminescence properties of polycrystalline CuGaTe 2 samples. The photoluminescence spectra of "heavily doped" semiconductors are usually characterized by the broadening of the photoluminescence bands that is caused by the fluctuations of the forbidden band edges. The deep photoluminescence region observed (0.8 -1.3 eV) consists of two peaks. One of them is located at 0.955 eV and has been reported before. Another, totally new band was discovered at 1.14 eV. The low-temperature j-shift of both bands was detected. Also, rather significant blue shift with the increasing temperature was noticed. It is proposed that both bands consist of two recombination channels. At low temperatures tail-to-impurity recombination dominates. As the temperature increases, the tail-toimpurity recombination transforms into band-to-impurity recombination.

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