Variable optical buffer using slow light in semiconductor nanostructures

Voltage-controlled entanglement and quantum-information transfer between spatially separated quantum-dot molecules

“…where γ j0 iq (j = 1, 2) and Γ mn iq (m, n = 0, 1, 2; m = n) are population decay rate and dephasing decay rate of QDM [43], respectively. Usually, Γ mn iq is the dominant mechanism, which originates not only from electron-electron scattering and electron-phonon scattering but also from inhomogeneous broadening due to scattering on interface roughness.…”

“…With unique advantages, such as high nonlinear optical susceptibility, large electric-dipole moments of intersubband transitions, and great flexibility in designing devices [36][37][38], SQD system has wide applications in the fields of quantum optics and quantum information [39][40][41][42][43][44][45][46][47][48]. For example, the electromagnetically induced transparency (EIT) and the propagation of slow light have been realized in the SQD medium [43].…”

Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

“…28 EIT effects in quantum dots and wells have mostly been studied using models that are rooted in atomic physics assuming an archetypical EIT configuration in an ideal medium. 3,[6][7][8] These models truncate the number of active levels in the system to consider only the three levels being addressed by the laser fields. The generic EIT setup relies on a coupling and a probe laser driving separate transitions ͑see Fig.…”

“…For instance, the practical exploitation of slow light effects such as electromagnetically induced transparency ͑EIT͒ demonstrated in ultracold atoms 2 is naturally pursued using quantum dots. 3 Important aspects in this context are to accurately model the optical properties of the quantum dots and to consider the influence of the lattice mismatch induced strain field and its effects on the band structure and eigenstates. Apart from Refs.…”

Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes

“…Low-dimension semiconductor nanostructures have recently attracted much attention because of their wide physical interest and their potential device applications such as low current density threshold lasers [1,2], all-optical buffers [3,4], saturable absorbers [5], optical memories [6], etc. Among the variety of such materials the quantum dashes (strongly elongated quantum dots) are of growing interest now due to perspectives in optoelectronic applications, especially in telecommunication lasers operating at 1.55 mm and longer wavelengths [7][8][9].…”