Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

“…We present results for the energy levels and we compare systematically the confined wave functions given by the two methods. As is well known the shape and the spacial distribution of the wave functions strongly influence the optical properties of a nanostructure, e.g., because of a different overlap of the states [19], hence we also analyze and compare some of the most relevant interband dipole moments.…”

“…Optoelectronic properties of InGaAs zincblende QD with varying shape and size have already been studied with ⃗ ⋅ ⃗ theory [18], and with 8-band model to investigate the effect of strain and band-mixing [19].…”

Electro-optic waveform interconnect based on quantum interference

“…The energy level configuration can be extended from Λ-type to V -and cascade-type three-level systems, even to general N - [40] or M -type [41] configurations. Moverover, the medium could include a wide range of systems, for example, a semiconductor quantum dot [42] or quantum well [43], etc.…”

Slow light between two absorbing resonance in asymmetry double quantum dots

“…Recently, slow light attractive for the delay line has been studied widely in the quantum dots (QDs) systems. Most early work is based on electromagnetically induced transparency (EIT) [1][2][3][4][5][6][7][8]. The QDs homogeneous line width [1,2], inhomogeneous broadening [1,5,6,8], many-body interactions [3], size and geometry [4] dependence on the slow light properties of QDs is studied.…”