Abstract:This paper presents a fully physics‐based variability analysis of single‐fin double‐gate Metal Oxide Semiconductor FET (MOSFET) AC parameters, without resorting to any approximated quasi‐static analysis based on the variations of the DC drain current or charge. Variations of the AC parameters have been investigated as a function of all the relevant geometrical and physical parameters, with emphasis on the ones affecting the device parasitics, especially important for high‐frequency analog applications. A numer… Show more
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