Vapour pressures and sublimation enthalpy of solid indium(III) iodide

Brunetti, Bruno; Giustini, A.; Piacente, V.

doi:10.1006/jcht.1996.0156

Cited by 9 publications

(1 citation statement)

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“…At 0.1 Pa, which is the process pressure, the boiling point of indium tri-chloride (InCl 3 ) compounds is 302 °C [18]. On the other hand, if we use iodine as an etching gas, the etching compound is indium tri-iodide (InI 3 ), and its boiling point is 127 °C [19]. In other words, the iodide is a higher vapor pressure indium compound compared with the chloride and thus should have higher volatility.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2 NBE. We showed the advantages of HI NBE vs Cl2 NBE, namely: higher InGaN etch rate, better surface smoothness, and significantly reduced etching residues. Moreover, HI NBE was suppressed of yellow luminescence compared with Cl2 plasma. InClx is a product of Cl2 NBE. It does not evaporate and remains on the surface as a residue, resulting in a low InGaN etching rate. We found that HI NBE has a higher reactivity with In resulting in InGaN etch rates up to 6.3 nm/min, and low activation energy for InGaN of approximately 0.015 eV, and a thinner reaction layer than Cl2 NBE due to high volatility of In- I compounds. HI NBE resulted in smoother etching surface with a root mean square average (rms) of 2.9 nm of HI NBE than Cl2 NBE (rms: 4.3 nm) with controlled etching residue. Moreover, the defect generation was suppressed in HI NBE vs. Cl2 NBE, as indicated by lower yellow luminescence intensity increase after etching. Therefore, HI NBE is potentially useful for high throughput fabrication of μLEDs.

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Section: Introductionmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se₂

Palmiotti

Marsillac

Rockett

2022

Progress in Photovoltaics

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CdTe films are deposited at low temperatures and recrystallized to photovoltaic device quality using CdCl2 treatments, leading to competitive manufacturing costs. Cu(In,Ga)Se2 (CIGS) typically requires high‐temperature, low‐rate depositions to produce high‐efficiency devices, resulting in higher costs. A similar metal halide treatment of CIGS has been demonstrated by us previously for some metal halide sources. To understand and optimize the process, a thermodynamic evaluation of candidate metal halides for such treatments is presented as a guide for their selection. By comparing bond dissociation energies, mono‐ and di‐halide compounds are proposed to be ideal compounds to act as transport agents. Known recrystallization and temperature reduction benefits by Ag alloying suggest that Ag halides should be used to aid transport of all species. The high vapor pressure and mobility of Ga compounds still pose a problem for metal halide treatment, resulting in Ga etching and removal of intentional Ga gradients. Less severe but similar issues with In compounds may occur. Cu compounds have low vapor pressures that may limit transport; however, Cu is highly mobile in CIGS, and recrystallization still occurs.

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Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide

Callegari

Nellen

Yang

et al. 2007

Applied Surface Science

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Vapour pressures and sublimation enthalpy of solid indium(III) iodide

Cited by 9 publications

References 9 publications

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se₂

Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide

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Vapour pressures and sublimation enthalpy of solid indium(III) iodide

Cited by 9 publications

References 9 publications

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se2

Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide

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A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se₂