Vapour growth of II–VI solid solution single crystals

Korostelin, Yu. V.; Kozlovsky, V. I.; Насибов, А. С.; Shapkin, P. V.

doi:10.1016/0022-0248(95)00833-0

Cited by 43 publications

(11 citation statements)

References 4 publications

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“…Ternary single crystals having considerably different saturated vapour pressures of their binary components were grown by a modified contact-free growth method [9]. The main features of this modifications are: (1) the use of polycrystalline binary sources placed in separate sections of the source; and (2) control of the mass transport rate by using separate mass flow paths and appropriate orifices.…”

Section: Methodsmentioning

confidence: 99%

“…Growth of homogeneous crystals of most of II-VI solid solutions poses a problem due to a significant difference in vapour pressure of the binary components what leads to strong segregation in the grown crystals [8]. The first successful experiments on vapour growth of large homogeneous II-VI single crystals of (Zn, Cd)Se, (Zn, Cd)S, Zn(Se, Te), Zn(S, Te), and Cd(S, Te) were performed by contact-free growth method using polycrystalline binary compounds as the source materials [9]. In this paper, a further development of the contact-free growth method to obtain ternary and doped single crystals of substrate quality is presented.…”

Section: Introductionmentioning

confidence: 99%

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Vapour growth of II–VI solid solution single crystals by contact-free technique

Korostelin

Kozlovsky

2004

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Vapour growth of II–VI solid solution single crystals by contact-free technique

Korostelin

Kozlovsky

2004

Journal of Alloys and Compounds

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“…The Kolesnikov's group [8] used high pressure Bridgman (HPVB) and the vertical zone melting (HPVZM) method to grow CdSe. In addition, chemical vapor transport method (CVTM) [9] was also reported.…”

Section: Introductionmentioning

confidence: 97%

Synthesis and growth of nonlinear infrared crystal material CdSe via seeded oriented temperature gradient solution zoning method

Mao

et al. 2011

Front. Optoelectron. China

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Single crystals of CdSe were grown by using seeded oriented temperature gradient solution zoning (S-TGSZ) method with the sizes of 20 mm in diameter and 80 mm in length. The crystals were characterized with X-ray diffraction, transmission spectrophotometer and infrared microscope. The transmission spectra showed that the infrared transmission is above 65% and the mean absorption was 0.01-0.04 cm -1 in the range of 2.5-20 μm. With 2.797 μm Cr,Er:YSGG laser as pumping source, experiments of optical parametric oscillator (OPO) were performed by using fabricated 5 mmÂ5 mmÂ30 mm device crystal. The signal and idler wavelengths and the output average power were respectively 4.3 μm, 8 μm and 400 μJ. Optical-to-optical conversion efficiency was obtained by 12%.

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“…At normal temperature and pressure, it crystallizes in a hexagonal close packed wurtzite structure [4] and belongs to the P6 3 mc (C 4 6V ) space group [5]. The CdSe single crystal has captured significant interest due to its high potential for room temperature nuclear radiation detectors [6,7] and nonlinear optical devices [8][9][10][11][12][13]. Many methods, such as the temperature gradient solution zoning technique (TGSZ) [14], chemical vapor transport method (CVTM) [15], solution growth [16], melt-growth [17] and solid-state re-crystallization (SSR) [18], etc., have been used for CdSe single crystal growth.…”

Section: Introductionmentioning

confidence: 99%