1996
DOI: 10.1016/0022-0248(95)00833-0
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Vapour growth of II–VI solid solution single crystals

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Cited by 43 publications
(11 citation statements)
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“…Ternary single crystals having considerably different saturated vapour pressures of their binary components were grown by a modified contact-free growth method [9]. The main features of this modifications are: (1) the use of polycrystalline binary sources placed in separate sections of the source; and (2) control of the mass transport rate by using separate mass flow paths and appropriate orifices.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Ternary single crystals having considerably different saturated vapour pressures of their binary components were grown by a modified contact-free growth method [9]. The main features of this modifications are: (1) the use of polycrystalline binary sources placed in separate sections of the source; and (2) control of the mass transport rate by using separate mass flow paths and appropriate orifices.…”
Section: Methodsmentioning
confidence: 99%
“…Growth of homogeneous crystals of most of II-VI solid solutions poses a problem due to a significant difference in vapour pressure of the binary components what leads to strong segregation in the grown crystals [8]. The first successful experiments on vapour growth of large homogeneous II-VI single crystals of (Zn, Cd)Se, (Zn, Cd)S, Zn(Se, Te), Zn(S, Te), and Cd(S, Te) were performed by contact-free growth method using polycrystalline binary compounds as the source materials [9]. In this paper, a further development of the contact-free growth method to obtain ternary and doped single crystals of substrate quality is presented.…”
Section: Introductionmentioning
confidence: 99%
“…The Kolesnikov's group [8] used high pressure Bridgman (HPVB) and the vertical zone melting (HPVZM) method to grow CdSe. In addition, chemical vapor transport method (CVTM) [9] was also reported.…”
Section: Introductionmentioning
confidence: 97%
“…At normal temperature and pressure, it crystallizes in a hexagonal close packed wurtzite structure [4] and belongs to the P6 3 mc (C 4 6V ) space group [5]. The CdSe single crystal has captured significant interest due to its high potential for room temperature nuclear radiation detectors [6,7] and nonlinear optical devices [8][9][10][11][12][13]. Many methods, such as the temperature gradient solution zoning technique (TGSZ) [14], chemical vapor transport method (CVTM) [15], solution growth [16], melt-growth [17] and solid-state re-crystallization (SSR) [18], etc., have been used for CdSe single crystal growth.…”
Section: Introductionmentioning
confidence: 99%