Vaporization study of mercury iodides HgI2 and Hg2I2

Effects of the source temperature on the formation of a metastable HgI2 phase and consequences for the nucleation and growth behaviors in PVT ampoules

“…In vapor transport region, if only congruently sublimated HgI 2 molecules [16] exist without any specific nanostructure, then, in crystal growth side with T cry oT c , a-HgI 2 should be the only possible phase to re-crystallize from vapors no matter whether T sou oT c or T sou 4T c . This is contrary to the results from Figs.…”

“…With this assumption, the following scenario is proposed to explain our experimental observation as summarized in Table 1. First, in the source powder side, as T sou near T c , the HgI 2 molecules relax and vaporize from the powder interface not only in a congruent sublimation without decomposition [16] but also in forms of small clusters. The nanostructure of these vaporized HgI 2 clusters tends to preserve their corresponding stable phase structure from the source side (i.e., a-HgI 2 as T sou oT c and b-HgI 2 as T sou 4T c ).…”

Oriented polycrystalline α-HgI2 thick films grown by physical vapor deposition

“…From experimental conditions as listed in Table 1, the source vapor pressure, p sou , and the equilibrium vapor pressure on the substrate, p sub , are estimated with respect to T sou and T sub [11], and then, Dp ¼ p sou 2p sub is calculated. Fig.…”

“…Thus, to obtain high-quality polycrystalline a-HgI 2 thick films, the temperature of the substrate should be controlled below 127 1C. Meanwhile, a-HgI 2 has high-enough vapor pressure p sou (about 0.12 Torr at 120 1C) around these low temperatures [11]; hence, a-HgI 2 solid phase can be deposited efficiently from physical vapor.…”

Investigation of the phase barograms and diagrams of the GeI4-I2, GeI4-BiI3 and GeI4-HgI2 systems

“…With regard to the optoelectronic properties of HgI2 [16], mainly the solubility of metal iodides of other valences is of interest. To determine the solubility limit of GeI4 in HgI2, HgI2 crystals were thermally treated beside GeI4 as illustrated in Fig.…”