Vapor phase epitaxy dynamics

Frolov, I. A.; Tomchinskii, A.M.

doi:10.1016/0022-0248(85)90379-3

Cited by 7 publications

(4 citation statements)

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“…Simplified approximations of a were developed for isotopic gas mixtures, where the collision integrals differ by a factor that depends only on the molecular weights, and with the further assumption that IM~ -Mjl << Mj. The expressions include 115 (Mj-Mi~ kT r [4] 118 \Mj + M~/ where kT* is a function of the intermolecular forces (kT* = 1 for elastic spheres) and (22)(23)(24) a = 1.5 \~/…”

Section: J = __dp [Vxi + Xixjav In (T)]mentioning

confidence: 99%

“…The deposition of in situ phosphorus-doped polysilicon in LPCVD reactors has been studied by a number of investigators (1)(2)(3)(4). In situ boron-doped polysilicon, however, has received less attention and, apart from brief mention and illustrative data in a textbook (5), published investigations appear to be limited to higher pressure systems (6)(7)(8).…”

Section: Introductionmentioning

confidence: 99%

“…Models of the growth process have been developed to investigate growth uniformity (2)(3)(4)(5). Models of other chemical vapor deposition (CVD) processes (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17) bear some similarity to MOCVD models.…”

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confidence: 99%

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Thermal Diffusion in Metal‐Organic Chemical Vapor Deposition

Holstein

1988

J. Electrochem. Soc.

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The rate of chemical vapor deposition (CVD) can be significantly affected by thermal diffusion. Accurate predictions of growth rate and growth rate uniformity require accurate estimations of thermal diffusion factors. A complete first approximation of thermal diffusion factors, however, can be a complex process. We present a simple expression for estimating thermal diffusion factors for heavy molecules present in dilute concentrations in a light carrier gas, conditions that are usually valid for metal-organic chemical vapor deposition (MOCVD). This simple expression yields approximations within a few percent of those calculated from a complete first approximation. The error for the methyl and ethyl organometallics of aluminum, gallium, and indium in hydrogen or helium is less than 1% at concentrations below 0.1% and less than 4% for concentrations below 0.5%. For hydrides of phosphorus, arsenic, or silicon in hydrogen or helium, the error is less than 3% at concentrations below 1%. Thermal diffusion factors for dilute concentrations of organometallics and hydrides in helium are greater than in hydrogen. Thermal diffusion factors are dependent on temperature, much more so for hydrogen carrier gas than for helium. Simple models are used to demonstrate the influence of thermal diffusion on MOCVD growth rate under both mass-transfer controlled and kinetically controlled growth and on the composition of species incorporated under equilibrium-controlled growth conditions.

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Section: J = __dp [Vxi + Xixjav In (T)]mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal Diffusion in Metal‐Organic Chemical Vapor Deposition

Holstein

1988

J. Electrochem. Soc.

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“…The rectangularity of the grid makes it possible to solve the difference equations using the sweep method. 6,@ + sin (ao) a,@),…”

Section: The Gas-flow Equationsmentioning

confidence: 99%

A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor

Brozi

1992

Phys. Stat. Sol. (a)

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The new computer model of the MOCVD process developed by the author consists of three basic parts: the gas flow model (giving the velocities and temperature distributions in the gas phase), the model of changes of concentrations of the active species in the gas phase (influenced by gas phase reactions and overall gas motion and temperature), and the model of the crystal growth process itself. This paper presents the solution of the first of the mentioned problems: the model of the gas flow in horizontal MOCVD reactor.

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