Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application

Abstract

Vapor-phase epitaxial growth of In0.53Ga0.47As lattice matched to (100) -oriented InP substrates is described, and the performance of photodiodes fabricated from this material is presented. Gas-flow conditions for lattice-matched growth with various Ga-CHl flows were established for growth using the hydride process. The effect of substrate temperature on gas-flow ratios necessary for lattice-matched growth was studied over the temperature range 650–750 °C. Growth rates were found to vary from about 8 to about 60 μm/h over this temperature range. The activation energy of surface reaction was determined to be 44 kcal/mole. Photodiodes fabricated from an InP/In0.53Ga0.47As/InP structure showed rise and fall times of ≲1 nsec with quantum efficiencies in excess of 95% at 1.22 μm.

The Growth of Epitaxial Layers of Ga0.47In0.53As by the Vapor‐Phase Epitaxy‐Hydride Method Using a Gallium‐Indium Alloy Source

“…A value of 180 kJ/mol was found for the energy of activation for Ga,.53In~)ATAs prepared from a 12.3 m/o Ga alloy. This value is in close agreement with the value of 44 kca]/mol (184 kJ/mol) reported by Hyder et al (20). These authors used the VPE-hydride technique with separate metal sources.…”

Air-stable and ultrasensitive solution-cast SWIR photodetectors utilizing modified core/shell colloidal quantum dots

“…The SWIR band is in the range of 1–2.5 µm, which is widely used as a visually safe waveband. However, the only available high-efficiency photodetector (i.e., InGaAs) is expensive to produce via an epitaxial growth process; therefore, this photodetector is limited to applications in space exploration and military [ 16 , 17 ]. Nevertheless, an attractive platform for low-cost photodetectors in the SWIR spectral region is provided by lead sulfide (PbS) QDs owing to their excellent photosensitivity, bandgap tunability, and solution-processability [ 3 , 18 – 22 ].…”

Inorganic UV–Visible–SWIR Broadband Photodetector Based on Monodisperse PbS Nanocrystals

“…For sensing in the short‐wave IR (SWIR) wavelength region (up to 1700 nm), InGaAs photodetectors are typically used. However, InGaAs image sensors are expensive because the epitaxial process used to grow these materials and they can only be used in the near‐IR (NIR) and SWIR spectral regions . It is desirable to have a multispectral sensor with good wavelength sensitivity from 350 to 2000 nm.…”