The Growth of Epitaxial Layers of Ga0.47In0.53As by the Vapor‐Phase Epitaxy‐Hydride Method Using a Gallium‐Indium Alloy Source

Abstract

not Available.

Equilibrium Analysis of the VPE‐Hydride Method Using a Gallium‐Indium Alloy Source

“…The present analysis may shed light on why various alloy compositions have been reported (9)(10)(11)(12)18) for the preparation of In0~aGa0.47As. Previously, the compositions of the ternaries when prepared with the alloy source were varied as a function of alloy concentration at constant initial pressures of hydrogen chloride and arsine.…”

“…Calculations using the present equilibrium analysis were performed employing the experimental data of various investigators (9)(10)(11)(12)18). Kordos et al (12) and Jacobs et al (18) reported the compositions of the ternaries obtained as a function of the alloy compositions at fixed partial pressures of hydrogen chloride and arsine.…”

“…These results open the possibility that In0.53Ga0.4~As can be prepared in a continuous mode with the alloy technique. Experimental studies (9,10) on the preparation of In0.53Ga~.47As with the same alloy showed that the gallium content in the Ga-tn alloy decreases with continuous operation. This loss of gallium in the alloy can now be compensated by increasing the partial pressure of hydrogen chloride to maintain the In0.53Ga0.47As.…”

“…compartments one for each metal. A series of studies (9)(10)(11)(12) have investigated the use of an alloy source to replace the double-barrel reactor. These investigators have indicated that the alloy source method also removes the requirement for the precise control of the two hydrogen chloride flow rates over the metals.…”

“…The activities of indium and gallium in the alloy are determined from the standard Eq. [10] and [11] ai~ = ~]I~NIn [10] aGa = 7GaNOa [11] where ~1 and N are the activity coefficient and mole fraction, respectively. The activity coefficients are calculated from the Eq.…”