2005
DOI: 10.1016/j.sab.2004.10.013
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Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

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Cited by 9 publications
(4 citation statements)
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“…As the TXRF is being used to characterize the new films being introduced into the semiconductor process line and to monitor for cross contamination from these new materials [14][15][16][17][18], nanoliter depositions can be used with TXRF to improve upon the characterization process. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…As the TXRF is being used to characterize the new films being introduced into the semiconductor process line and to monitor for cross contamination from these new materials [14][15][16][17][18], nanoliter depositions can be used with TXRF to improve upon the characterization process. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Whereas before only Si and SiO 2 wafers were measured, now a whole range of materials as wafers or layers have been reported in research and development applications: silicon nitride [102,103], siliconon-insulator (SOI) [104], Ge [105,106], GaAs [107,108], HfO 2 [109][110][111], Al 2 O 3 [110,111], Ta 2 O 5 [112], polymer layers [113] and other unpublished materials. Both procedures for Direct-TXRF and VPD-DC-TXRF have been reported.…”
Section: Novel Applications At Materials Levelmentioning
confidence: 99%
“…A first concern is that, in order not to have droplet loss during scanning in the droplet collection step, the collection liquid must exhibit a high contact angle (roughly >50°) on the substrate. For Ge substrates for example, the substrate after VPD exposure (contact angles <10°) is not sufficiently hydrophobic to allow scanning using dilute aqueous solutions [106]. Concentrated HCl or HBr solutions however showed higher contact angles enabling the scanning process.…”
Section: Vpd-dc-txrfmentioning
confidence: 99%
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