Vapor–liquid–solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder

Yu, Leshu; Lv, Yingying; Zhang, Xiaolan; Zhang, Yiyue; Zou, Ruyi; Zhang, Fan

doi:10.1016/j.jcrysgro.2011.08.025

Cited by 29 publications

(18 citation statements)

References 23 publications

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“…In addition, technological advances led to the emergence of novel low-dimensional forms of III-V binary compounds. Experimental fabrication of AlN nanowires [7][8][9][10], nanobelts [11][12][13], and nanodots [14,15] has already been reported. In recent years, theoretical and experimental studies of graphene [16] provided a wide range of knowledge for a new class of materials, and they opened up possibilities for the synthesis of many similar structures, such as silicene [17][18][19][20], germanene [20][21][22][23], transition-metal dichalcogenides (TMDs) [24][25][26][27][28][29][30][31], and hexagonal structures of III-V binary compounds (e.g., h-BN, h-AlN) [32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

et al. 2015

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Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm −1 and an E g mode at 703 cm −1 , which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA -type stacking is found to be the most favorable one, and interlayer interaction is strong. While N -layered h-AlN is an indirect-band-gap semiconductor for N = 1 − 9, we predict that thicker structures (N 10) have a direct band gap at the point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.

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Section: Introductionmentioning

confidence: 99%

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

et al. 2015

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“…A typical VLS process probably occurs after meeting the two prerequisites: (1) nano-sized metallic liquid droplets and (2) sufficiently low vapor pressure of the used precursor. In contrast to the VLS growth, the studies on the VS growth mechanism were relatively lagged due to the difficulty in controlling the geometry of final products [26]. From the clear morphological characterizations of as-synthesized products on Si substrate, on both ends of nanowires and nanobelts there is no catalyst particles which is crucial in the generation of VLS to prepare 1D inorganic nanomaterials.…”

Section: Resultsmentioning

confidence: 99%

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

Zheng

et al. 2012

Materials Science and Engineering: B

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“…Most recently, through the thermal nitridation of Al powder, Yu et al [46] successfully obtained fine and smooth AlN nanowires with uniform diameters on Au-coated Si substrate. The thickness of Au film on Si substrate was \5 nm and the reaction temperature was set in the region between 900 and 1000°C.…”

Section: Catalyst-assisted Vls Growth Methodsmentioning

confidence: 99%

“…Various fabrication methods have been employed to synthesize these nanowires and they may be classified into four main classes: (1) template-confined method [16,[31][32][33], (2) direct current (DC) arc discharge method [34][35][36][37][38], (3) catalyst-assisted vapor-liquid-solid (VLS) growth method [39][40][41][42][43][44][45][46], and (4) catalyst-free vapor-solid (VS) growth method [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63]. Although significant progress in the synthesis of AlN nanowires has been achieved lately, some challenges remain and are expected to be overcome in the near future.…”

Section: Introduction and Background Of Aluminum Nitride (Aln) Nanowiresmentioning

confidence: 99%

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

Kenry

Yong

2012

J Mater Sci

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One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.Introduction and background of aluminum nitride (AlN) nanowires

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Vapor–liquid–solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder

Cited by 29 publications

References 23 publications

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

Hexagonal AlN: Dimensional-crossover-driven band-gap transition

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

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