AlN nanowires: synthesis, physical properties, and nanoelectronics applications

Abstract

One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.Introduction and background of aluminum nitride (AlN) nanowires

Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive (λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire

“…The spectral selectivity demonstrates that the AlN micro/nanowire‐based photodetector is naturally VUV‐sensitive, attributing to the high‐quality and defect‐free property of the AlN micro/nanowire grown by the presented two‐step PVT method. In the past few years, several groups have devoted themselves to the research on the photoconductivity of AlN nanowires, but none of them have successfully prepared a VUV‐sensitive low‐dimensional photodetector, mainly because the synthesizing method they applied cannot grow high‐purity and high‐crystalline AlN micro/nanowires. Fortunately, we have achieved this elusive target.…”

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

“…9 In this regard, tremendous efforts have been devoted to synthesizing/growing AlN nanowires via different techniques, including chemical vapour deposition, direct current arc discharge method, and molecular beam epitaxy (MBE). [10][11][12][13][14] To date, however, such AlN nanowires generally exhibit extremely poor structural and optical properties, with no reports on the band-edge optical emission at room temperature. In addition, a detailed understanding of many other important properties of AlN nanowires, including the strain distribution and the influence of surface on the optical emission, has remained elusive.…”

“…The presence of a strong SO-phonon mode could be related to the oxidation of AlN nanowire surfaces. 10 The formation energy analysis suggests that oxygen could be easily incorporated in AlN by substituting for nitrogen atoms. 28,29 In addition, negatively charged vacancies V Al 3À in AlN were found to be energetically favourable and thus could bind to positively charged substitutional oxygen forming defect complexes on the surfaces of nanowires.…”

Processamento, propriedades e aplicações das cerâmicas de nitreto de alumínio

“…A terceira linha de pesquisa é caracterizada pela síntese de AlN na forma de nanotubos [131], nanofios [132] e nanoagulhas (nano-needles) [133]. O processo de síntese do AlN em nanoestruturas não é recente [134], mas atualmente tem sido sintetizado em diversas morfologias (nanowhiskers, nanospheres, nanofibers, nanocones, nanorods, nanobelts, nanotips, nanorings) por meio de diferentes técnicas como sol-gel, sublimação, crescimento catalítico assistido por laser, deposição química a vapor e crescimento epitaxial por feixe molecular [132,133].…”

“…O processo de síntese do AlN em nanoestruturas não é recente [134], mas atualmente tem sido sintetizado em diversas morfologias (nanowhiskers, nanospheres, nanofibers, nanocones, nanorods, nanobelts, nanotips, nanorings) por meio de diferentes técnicas como sol-gel, sublimação, crescimento catalítico assistido por laser, deposição química a vapor e crescimento epitaxial por feixe molecular [132,133]. Os resultados são promissores, pois o AlN nanoestruturado exibe um conjunto de propriedades que o torna um potencial candidato para a fabricação de dispositivos optoeletrônicos, lasers de alta energia, sensores de onda pulsante (pulse wave sensors), diodos emissores de luz (LED), ressonadores mecânicos em nanoescala e emissores de elétrons por campo [88,133].…”