Vapor deposition of thin cadmium sulfide layers using thermal decomposition of dithiolatocadmium complexes

Takahashi, Yasutaka; Yuki, Rie; Sugiura, Masamitsu; Motojima, Seiji; Sugiyama, Kohzo

doi:10.1016/0022-0248(80)90098-6

Cited by 70 publications

(27 citation statements)

References 17 publications

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“…Similar surface morphology also has been observed for the growth of ZnS from previously studied single-source precursors by MOCVD e.g. zinc bis(diisobutyldithiophosphinate) [32] and zinc diethyldithiocarbamate. [33] EDAX indicates the presence of zinc and sulfur, however, 3% of phosphorous was also detected ] but the optimum growth temperature appears to be between 425Ϫ450°C with the precursor temperature at 275°C.…”

supporting

confidence: 63%

Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors

et al. 2003

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supporting

confidence: 63%

Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors

et al. 2003

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“…Phosphorus-containing molecules such as Cd[(CH 3 ) 2 -PS 2 ] 2 , [47] Cd[(C 2 H 5 )PS 2 ] 2 , [48] and M[( t Bu) 2 P(Q)NR] 2 (R = i Pr, c-C 6 H 11 ; M = Zn, Cd; Q = Se, Te) [49] can be used to grow films with no risk of phosphorus incorporation. In three studies, the films were grown under vacuum, in the temperature range 400±500 C, with source temperatures in the range 160±200 C, except for Cd[( t Bu) 2 P(Te)N i Pr] 2 , which was heated to 100 C. Takahashi et al, [47] and Evans and Williams [48] noticed that pre-metallization (copper, silver, gold) of the substrate surfaces (glass or (111)InP) greatly facilitated the deposition of CdS.…”

Section: From Phosphinochalcogenoic Complexesmentioning

confidence: 99%

“…In three studies, the films were grown under vacuum, in the temperature range 400±500 C, with source temperatures in the range 160±200 C, except for Cd[( t Bu) 2 P(Te)N i Pr] 2 , which was heated to 100 C. Takahashi et al, [47] and Evans and Williams [48] noticed that pre-metallization (copper, silver, gold) of the substrate surfaces (glass or (111)InP) greatly facilitated the deposition of CdS. Bwembya et al proposed the decomposition process below: [49] M[( t Bu) 2 P(Q)NR] 2 ± ?…”

Section: From Phosphinochalcogenoic Complexesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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“…One vital area, however, where metal carboxylates do not seem to have gained appreciable ground is in applied physics and electronics where some other metal organic compounds provide versatile routes for the preparation of thin films for electronic devices [32][33][34][35][36][37]. Utilization of these metal organic compounds as starting materials in the production of thin solid films involves pyrolysis [32][33][34], a route currently preferred to others because it permits considerable lowering of the working temperatures [35] and has been shown to give good quality films as well [35][36][37].…”

Section: John Wiley and Sons Limited Chichestermentioning

confidence: 99%

Pyrolytic decomposition of some even chain length copper (II) carboxylates

Akanni

Ajayi

Lambi

1986

Journal of Thermal Analysis

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The products of the pyrolytic decomposition of some even chain-length copper (II) carboxylates from decanoate to octadecanoate inclusive have been identified, using a flow system, to be copper, carbon dioxide, a carboxylic acid and an odd chain-mength alkene. These products are similar to those reported for the decomposition of mercury(lI) carboxylates. The unexpectedly low (less than unity) CO2/soa p ratio was attributed to the reduction of the CO 2 to carbon monoxide. The carboxylic acid was characterised by wet chemical tests, determining the melting points of the acid and its amide derivative and matching its IR spectrum with that of the authentic acid. Elemental analysis and wet chemical tests were employed for the identification of the alkene.The products of decomposition and mechanism proposed to account for the degradative route of the systems show that good quality thin solid copper oxide films may only be obtained from the decomposition of copper(II), carboxylates if the carrier gas is non-inert (e.g. oxygen).Most of the previous studies in this laboratory [1][2][3][4][5][6][7][8] and elsewhere [9-11] on metal carboxylates (soaps) have focussed attention mainly on their physical properties in the molten phase. For example, in our laboratory, the electrical conductivity, viscosity and heat of phase changes of lead [1,3,6]

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Vapor deposition of thin cadmium sulfide layers using thermal decomposition of dithiolatocadmium complexes

Cited by 70 publications

References 17 publications

Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors

Deposition of II‐VI Thin Films by LP‐MOCVD Using Novel Single‐Source Precursors

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Pyrolytic decomposition of some even chain length copper (II) carboxylates

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