Sulfur dioxide (SO 2 ) is one of the most dangerous air pollutants that impair environment and human health. SO 2 in air is released during the burning of fossil fuels and plays one major role in the formation of acid rain. The repeated exposure to low levels of SO 2 can cause permanent pulmonary impairment for humans. [ 1 ] The long and short-term exposure limits for SO 2 gas are 2 and 5 ppm, respectively, [ 1 , 2 ] and the U. S. Environmental Control Agency has set the acceptable limit for SO 2 in ambient air at a level of 0.5 ppm. [ 3 ] It is of great importance to measure low concentration of SO 2 in air accurately and fast for human health protection and air-quality monitoring.Semiconductor resistor sensors are, for more than 30 years, one of the most common used gas sensors to detect toxic and fl ammable gases such as NO 2 , H 2 S, CO, NH 3 , and H 2 because of their distinguished merits such as low cost, long lasting, high sensitivity, and good reliability, etc. [ 4 ] Organic fi eld-effect transistor (OFET) is another alternative semiconductor sensing technology with advantages over resistors, and has attracted much attention only recently. [ 5 ] The sensitivity can be dramatically enhanced by changing the source-drain current ( I SD ) of OFET when operating the sensors in the sub-threshold regime, as a result of the current modulation by the extra gate electrode. [ 6 ] Another advantage of OFET sensors is that the sensing response can be enhanced by integrating them in oscillator and adaptive amplifi er circuits. [ 7 ] These advantages combined with low cost and light weight of organic semiconductors ensure that OFET sensors have attracted much attention for the detection of a wide range of gases. [ 8 ] However, only few efforts have been made to develop the semiconductor SO 2 sensors and almost all of them are resistortype (a detailed performance list for the reported semiconductor SO 2 sensors is shown in Supporting Information Table S1). The semiconductor materials are mainly focused on metal oxide, such as SnO 2 , WO 3 and TiO 2 . Most reported semiconductor SO 2 sensors require an operating temperature of 200-600 ° C, demonstrate a sensitivity lower than 50%, face challenges in low concentration detection, or suffer from a slow response and recovery time of over 10 min.In this communication, an OFET based on gas dielectric and CuPc single crystalline nanowire as a novel SO 2 sensor with complete recovery and room-temperature detection is reported.To the best of our knowledge, this is the fi rst demonstration of SO 2 gas sensing based on OFETs. The sensitivity is characterized by the enhanced fi eld-effect mobility and is as high as 764% in 20 ppm SO 2 . The detect limitation is down to sub-ppm levels (0.5 ppm) with high sensitivity (119%) and high resolution (100 ppb). The exposed conductive channel is shown to be responsible for the sensitivity to SO 2 . Figure 1 a shows a schematic image of the gas dielectric fi eldeffect transistor (FET) sensor based on CuPc nanowire and the adsorption of SO 2 ...