Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor

Abstract

This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS2) films based on sulfurization of sputtered Mo thin films. I–V characteristics indicate that V atom doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance.

Vanadium‐Incorporated Metallic (1‐T) Molybdenum Sulfide Nanoroses for High‐Energy‐Density Asymmetric Supercapacitors

“…Additionally, the extended spacing allows fast lithium‐ion intercalation/deintercalation, hence preserving the nanostructure. The metastable 1T structure in MS increases on vanadium incorporation (form XPS results), altering its electrical behavior from metallic to semiconducting …”

“…This relative shift in the B.E. values is a result of shift of the Fermi level towards the valence band from p‐type doping . Thus, incorporation of vanadium in the nanostructure favors the formation of the 1T phase, encouraging it to be more metallic.…”

Micro-Fabricated Presure Sensor Using 50 nm-Thick of Pd-Based Metallic Glass Freestanding Membrane

“…Although thin and flat freestanding metallic glass membranes with the high elastic strain and low TCR have been produced successfully, small changing resistance value of the sensing element is an issue which against the fabricated devices toward the real applications. To overcome such this problem, the thin film high strain gauge materials, including Ge 2 Sb 2 Te 5 (gauge factor of 338, 39 ), MoS 2 (gauge factor of 104, 40 ), and V doped MoS 2 (gauge factor of 140, 41 ), should be integrated on thin film metallic glass membranes as highly sensitive elements. Such efforts to prove this are in progress and will be investigated in the next works.…”

Flexible Porous Carbon Black-Polymer Composites with a High Gauge Factor

“…(4)(5)(6)(7) For flexible device applications, flexible materials sensitive to strain are one of the key technologies. Among strain sensors, semiconductors, (8,9) ceramics, (10) and metals (11) are often used; nevertheless, these materials are basically not flexible. Conductive polymer composites made of nonconductive polymer and conductive filler are potential candidates of flexible strain-sensitive sensing materials suitable for the microfabrication of soft strain and pressure sensors.…”