Van der Waals nanomesh electronics on arbitrary surfaces

Abstract

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm2/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.

Patterned growth of AgBiS2 nanostructures on arbitrary substrates for broadband and eco-friendly optoelectronic sensing

“…The patterning of nanostructures at the microscale has been the main driving force in advancing the frontier of nanotechnology. 1–4 In particular, optoelectronics, quantum dots, 5 nanowires (NWs), 6 2D materials, 7 and their hierarchical 3D assemblies 8 have demonstrated enhanced light–matter interactions, where their micro-patterning has led to rapid progress in display and sensing 9 toward scalability and a new form factor ( i.e. , mechanical flexibility).…”

Tunable Contacts of Bi2O2Se Nanosheets MSM Photodetectors by Metal‐Assisted Transfer Approach for Self‐Powered Near‐Infrared Photodetection

“…[1][2][3][4][5][6][7][8][9][10][11] Up to now, metalsemiconductor-metal (MSM) devices and field-effect-transistors DOI: 10.1002/smll.202306363 are the common NIR photodetectors configurations. [12][13][14][15][16][17] Among all the photodetectors, metal-semiconductor contact is crucial to high-performance NIR photodetection. [18] Generally speaking, Ohmic contact benefits to the high photocurrent and responsivity, owing to the high collection efficiency of photogenerated carriers.…”

Further insights into the Na2WO4-assisted synthesis method for WS2

“…Low dimensional materials have attracted wide attention in recent decades. 1–7 Specifically, two-dimensional (2D) materials hold great promise for electronics and optoelectronics due to their exotic properties. 8–14 Among many 2D materials, transition metal dichalcogenides (TMDs) are the most intensively studied semiconductor materials because of their suitable bandgap, and intriguing electronic and optoelectronic properties, such as layer-number dependent bandgap and band structure, strong light–matter interaction, and large carrier mobility.…”