Tunable Contacts of Bi₂O₂Se Nanosheets MSM Photodetectors by Metal‐Assisted Transfer Approach for Self‐Powered Near‐Infrared Photodetection

Abstract

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal–semiconductor contact is always independent on the work function, which challenges the next‐generation optoelectronic devices. In this work, a metal‐assisted transfer approach is developed to transfer Bi2O2Se nanosheets onto the pre‐deposited metal electrodes, benefiting to the tunable metal–semiconductor contact. The success in Bi2O2Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre‐deposited asymmetric electrodes, the self‐powered near‐infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight/Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre‐depositing the metal electrodes on polyimide and glass, high‐performance flexible and omnidirectional self‐powered near‐infrared photodetectors are achieved successfully. This study opens up new opportunities for low‐dimensional semiconductors in next‐generation high‐performance optoelectronic devices.

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