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2024
DOI: 10.1039/d3tc04605b
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Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Zhaofang Cheng,
Shaodan He,
Xiaona Han
et al.

Abstract: The microscale structural phase transition in TMDs from 2H to 1T or 1T' phases offer a distinct approach for modulating the electronic properties of these materials. Although phase engineering for...

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