Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

High‐Performance Broadband Flexible Photodetectors Based on Ti3C2Tx MXene/Pyramidal Thin Si Heterostructures with Light Trapping Effect for Heart Rate Detection

“…Of note, as compared in Table 1 , the sizeable R and D * values were comparable or even superior to many photodetectors made of 2D material/bulk Si heterostructures, including MXene/Si, graphene/Si, MoS 2 /Si, MoTe 2 /Si, MoSe 2 /Si, and WSe 2 /Si heterostructures. [ 32,40,51,53,58–61 ] Furthermore, the variation of R with incident light intensity was studied at 730 nm, as displayed in Figure S5 (Supporting Information). It was observed that, the value of R could retain almost identical (≈450–500 mAW −1 ) at a low light intensity range of 6.5 µW cm −2 ‐5.31 mW cm −2 , while it gradually declined when light intensity exceeded 5.31 mW cm −2 .…”

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

“…19,20 The atoms of 2D materials are fixed in a plane via tight ionic or covalent bonds to make an atomic layer, whereas these thin atomic layers are bound together through weak van der Waals (vdW) interactions. 21 Hence, weak interaction between the interlayers makes it possible to exfoliate bulk crystals into single atomically thin layers and isolated thin 2D flakes. Two-dimensional atomic thin films, including TMDs, black phosphorus (BP), and graphene (Gr), along with interlayer vdW interaction and intralayer covalent bonding, have emerged as a promising and novel material family for optoelectronics and photonics owing to their appealing properties.…”

Mixed-Dimensional PtSe2/Bi2Te3/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection

“…6,7 Moreover, integrating multiple detectors operating in different wavelength ranges into a single sensing unit for broadband photodetection entails high costs, intricate integration processes, and increased device and system complexity. 8,9 Recently, numerous efforts have been devoted to develop the topologically insulated narrow band gap materials and their heterojunctions for broadband photodetection due to their attractive physical properties and great promise in novel optoelectrical applications. 10−13 As a typical topological insulator, Bi 2 Te 3 possesses an ultrahigh carrier mobility of 10 3 to 10 4 cm 2 V −1 s −1 , a substantial absorption coefficient, and a narrow band gap of 0.15 eV, making it an ideal component for broadband sensing.…”

“…As a core optoelectronic component, broadband photodetectors hold significant promise in various applications, spanning both civilian and military domains, including optical communication, biochemical analysis, remote monitoring, and so on. − However, current state-of-the-art broadband photodetection technologies mainly depend on semiconductors with small band gaps or special structures such as type-II superlattice or quantum wells. , Despite notable advancements, these technologies suffer from several limitations, including the complex and time-consuming growth processes of these materials or structures, the requirement for cryogenic operating condition with high power consumption and large module volume, and the difficulty in high-level integration, impede their further application in more scenes. , Moreover, integrating multiple detectors operating in different wavelength ranges into a single sensing unit for broadband photodetection entails high costs, intricate integration processes, and increased device and system complexity. , …”