2019
DOI: 10.1038/s41586-019-1052-3
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Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

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Cited by 627 publications
(621 citation statements)
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“…In these flexible devices, the FTCEs should form a close, intimate mechanical contact and adhesion with various active components of the flexible devices to ensure stable, low‐resistant electrical contacts. [ 9 ] Flexible optoelectronic devices rely on the stable and intimate electrical and mechanical contacts between electrodes and active device components. [ 10 ] Unstable contact formations at the interfaces of the electrodes and active device components can cause malfunctions and performance degradation of electronics and efficiency reduction of energy devices, adversely affecting device reliability.…”
Section: Introductionmentioning
confidence: 99%
“…In these flexible devices, the FTCEs should form a close, intimate mechanical contact and adhesion with various active components of the flexible devices to ensure stable, low‐resistant electrical contacts. [ 9 ] Flexible optoelectronic devices rely on the stable and intimate electrical and mechanical contacts between electrodes and active device components. [ 10 ] Unstable contact formations at the interfaces of the electrodes and active device components can cause malfunctions and performance degradation of electronics and efficiency reduction of energy devices, adversely affecting device reliability.…”
Section: Introductionmentioning
confidence: 99%
“…Interface engineering, such as insertion of additional vdW layers (graphene 15 , hexagonal boron nitride (hBN) 16 , etc. ), mechanical transfer of metal films 13 and incorporation with indium 17 , are explored to form ideal vdW contacts that are free from the chemical disorder.…”
mentioning
confidence: 99%
“…Thus, the electron carrier ac- cumulates at the In-MoS 2 interface, and no barrier exists for the electron carrier. Secondly, In and MoS 2 can form van der Waals interaction to demonstrate a low contact resistance and provide good contact, as reported in a recent study [34]. Here, 5 nm In followed by 50 nm Au were deposited as the source and drain electrodes, which can maintain the higher mobility for biosensor and also increase the adhesion force compared with gold electrodes.…”
Section: Device Measurement and Characterizationmentioning
confidence: 81%