Valley precession in graphene superlattices

Wang, S. K.; Wang, J.

doi:10.1103/physrevb.92.075419

Cited by 57 publications

(48 citation statements)

References 44 publications

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“…The Holstein-Hubbard model captures the interplay of electron-phonon coupling (∼ λ) and electron-electron repulsion (∼ U ). For the much studied case of a half-filled square lattice, earlier work [8][9][10][11][12][13][14] agreed on either longrange CDW or AFM order at T = 0 depending on λ and U , consistent with theoretically expected instabilities of the Fermi liquid. In contrast, relying on variational QMC simulations, two recent papers [14,15] reported the existence of an intermediate metallic phase with neither CDW nor AFM order, see Fig.…”

Section: Introductionsupporting

confidence: 71%

Dominant charge density wave correlations in the Holstein model on the half-filled square lattice

Hohenadler

Batrouni

2019

Phys. Rev. B

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We use an unbiased, continuous-time quantum Monte Carlo method to address the possibility of a zero-temperature phase without charge-density-wave (CDW) order in the Holstein model and the Holstein-Hubbard model on the half-filled square lattice. In particular, we present results spanning the whole range of phonon frequencies, allowing us to use the well understood adiabatic and antiadiabatic limits as reference points. For all parameters considered, our data suggest that CDW correlations are stronger than pairing correlations even at very low temperatures. These findings are compatible with a CDW ground state that is also suggested by theoretical arguments.

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Section: Introductionsupporting

confidence: 71%

Dominant charge density wave correlations in the Holstein model on the half-filled square lattice

Hohenadler

Batrouni

2019

Phys. Rev. B

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“…Ever since Geim and Novoselov demonstrated the first isolation of graphene (G) in 2004 1 , two-dimensional (2D) material has been attracting much attention since its superior properties 2 – 6 such as ultrahigh mobility of charge carriers at room temperature 7 , extreme mechanical strength 8 , superior thermal conductivities 9 , and high optical transmittance 10 . These properties render G very promising for catalysts 11 – 13 , nanoelectronic devices 6 , 14 , 15 , energy conversion and storage 16 – 20 , and sensors 21 – 24 . However, pristine G has a zero bandgap, which make it not suitable for many applications.…”

Section: Introductionmentioning

confidence: 99%

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Wang

Chou

Ren

et al. 2019

Sci Rep

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The structural and electronic properties of van der Waals (vdW) heterostructrue constructed by graphene and graphene-like germanium carbide were investigated by computations based on density functional theory with vdW correction. The results showed that the Dirac cone in graphene can be quite well-preserved in the vdW heterostructure. The graphene/graphene-like germanium carbide interface forms a p-type Schottky contact. The p-type Schottky barrier height decreases as the interlayer distance decreases and finally the contact transforms into a p-type Ohmic contact, suggesting that the Schottky barrier can be effectively tuned by changing the interlayer distance in the vdW heterostructure. In addition, it is also possible to modulate the Schottky barrier in the graphene/graphene-like germanium carbide vdW heterostructure by applying a perpendicular electric field. In particular, the positive electric field induces a p-type Ohmic contact, while the negative electric field results in the transition from a p-type to an n-type Schottky contact. Our results demonstrate that controlling the interlayer distance and applying a perpendicular electric field are two promising methods for tuning the electronic properties of the graphene/graphene-like germanium carbide vdW heterostructure, and they can yield dynamic switching among p-type Ohmic contact, p-type Schottky contact, and n-type Schottky contact in a single graphene-based nanoelectronics device.

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“…There has also been increasing interest in the transport properties of Kekulé-patterned graphene for applications in valleytronics [29][30][31][32][33][34][35], since the symmetry of the modulation folds the K, K valleys to the center of the BZ and enables intervalley transport for low-energy carriers [36][37][38][39]. Kekulé ordering has been predicted to arise in graphene due to multiple mechanisms like the ordering of adatoms [36,40], substrate mismatch [41][42][43], isotropic strain [44], electron-phonon coupling [45] and spin-phonon coupling [46].…”

mentioning

confidence: 99%

Optoelectronic Fingerprints of Interference between Different Charge Carriers in Graphene Superlattices and Analogies to Twisted Graphene Bilayers

Herrera,

Naumis

2021

Preprint

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Valley precession in graphene superlattices

Cited by 57 publications

References 44 publications

Dominant charge density wave correlations in the Holstein model on the half-filled square lattice

Dominant charge density wave correlations in the Holstein model on the half-filled square lattice

Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Optoelectronic Fingerprints of Interference between Different Charge Carriers in Graphene Superlattices and Analogies to Twisted Graphene Bilayers

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