Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure

Abstract

The structural and electronic properties of van der Waals (vdW) heterostructrue constructed by graphene and graphene-like germanium carbide were investigated by computations based on density functional theory with vdW correction. The results showed that the Dirac cone in graphene can be quite well-preserved in the vdW heterostructure. The graphene/graphene-like germanium carbide interface forms a p-type Schottky contact. The p-type Schottky barrier height decreases as the interlayer distance decreases and finally the contact transforms into a p-type Ohmic contact, suggesting that the Schottky barrier can be effectively tuned by changing the interlayer distance in the vdW heterostructure. In addition, it is also possible to modulate the Schottky barrier in the graphene/graphene-like germanium carbide vdW heterostructure by applying a perpendicular electric field. In particular, the positive electric field induces a p-type Ohmic contact, while the negative electric field results in the transition from a p-type to an n-type Schottky contact. Our results demonstrate that controlling the interlayer distance and applying a perpendicular electric field are two promising methods for tuning the electronic properties of the graphene/graphene-like germanium carbide vdW heterostructure, and they can yield dynamic switching among p-type Ohmic contact, p-type Schottky contact, and n-type Schottky contact in a single graphene-based nanoelectronics device.

Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN4 Heterostructures

“…The interlayer spacings of the GR/Janus-MGSN and the GR/Janus-MSGN vdWHs at the equilibrium state are calculated to be 3.27 and 3.33 Å, respectively. It is obvious that these values of interlayer spacings are comparable to those in other GR-based vdWHs, including the GR/phosphorene, GR/Ga 2 SSe, GR/GeC, which are typical vdW interactions. This finding suggests that the weak vdW interactions are mainly dominated in our considered GR/MoGeSiN 4 vdWHs.…”

Structural and electronic properties of Stanene-BeO heterobilayer

“…To find out the optimum spacing between two adjacent layers, the binding energies with respect to different interlayer distances (D) are calculated and shown in figure 2 and also in table 1. The binding energy of our heterostructure can be compared with other recently reported works on different heterostructures [39][40][41][42][43]. The optimum D value is found to be 3.0 Å for the Structure-2.…”

First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure

“…These properties make it promising to be used in Li-ion batteries as an anode material. 36 Two-dimensional materials are vertically stacked through van der Waals (vdW) interactions, [37][38][39][40][41][42][43][44][45] which lead to the exploration of new phenomena and designing feasible optoelectronic devices such as exible optoelectronic equipment, 46 tunnel transistors 47 and constructive tools. 48 Three types of band alignments are type-I, type-II, or type-III in the vdW heterostructure, each having its unique application, allowing for the realization of various instruments.…”